L. F. Edge - Publications, H-index & Citations

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L. F. Edge

international business machines (ibm)

28H-index

138Paper Count

2.3KCitation Count

Published Papers 28

Publication Date

Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

NATURE COMMUNICATIONS

IF15.7

2022-02-17

OAAI

Connors, Elliot J.; Nelson, J.; Edge, Lisa F.; Nichol, John M.

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Probing the Variation of the Intervalley Tunnel Coupling in a Silicon Triple Quantum Dot

PRX QUANTUM

IF11

2021-04-27

OAAI

Borjans, F.; Zhang, X.; Mi, X.; Cheng, G.; Yao, N.; Jackson, C. A. C.; Edge, L. F.; Petta, J. R.

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Progress toward a capacitively mediated CNOT between two charge qubits in Si/SiGe

NPJ QUANTUM INFORMATION

IF8.3

2020-09-18

OAAI

MacQuarrie, E. R.; Neyens, Samuel F.; Dodson, J. P.; Corrigan, J.; Thorgrimsson, Brandur; Holman, Nathan; Palma, M.; Edge, L. F.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

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Microwave engineering for semiconductor quantum dots in a cQED architecture

APPLIED PHYSICS LETTERS

IF3.6

2020-08-26

OAAI

Holman, Nathan; Dodson, J. P.; Edge, L. F.; Coppersmith, S. N.; Friesen, Mark; McDermott, R.; Eriksson, M. A.

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Low-frequency charge noise in Si/SiGe quantum dots (vol 100, 165305, 2019)

PHYSICAL REVIEW B

IF3.7

2020-07-16

OAAI

Connors, Elliot J.; Nelson, J. J.; Qiao, Haifeng; Edge, Lisa F.; Nichol, John M.

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Split-gate cavity coupler for silicon circuit quantum electrodynamics

APPLIED PHYSICS LETTERS

IF3.6

2020-06-08

OAAI

Borjans, F.; Croot, X.; Putz, S.; Mi, X.; Quinn, S. M.; Pan, A.; Kerckhoff, J.; Pritchett, E. J.; Jackson, C. A.; Edge, L. F.; Ross, R. S.; Ladd, T. D.; Borselli, M. G.; Gyure, M. F.; Petta, J. R.

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Two-axis quantum control of a fast valley qubit in silicon

NPJ QUANTUM INFORMATION

IF8.3

2019-11-06

OAAI

Penthorn, Nicholas E.; Schoenfield, Joshua S.; Rooney, John D.; Edge, Lisa F.; Jiang, HongWen

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Low-frequency charge noise in Si/SiGe quantum dots

PHYSICAL REVIEW B

IF3.7

2019-10-23

112

OAAI

Connors, Elliot J.; Nelson, J. J.; Qiao, Haifeng; Edge, Lisa F.; Nichol, John M.

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Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography

ADVANCED MATERIALS INTERFACES

IF4.4

2017-09-29

PREAI

Dyck, Ondrej; Leonard, Donovan N.; Edge, Lisa F.; Jackson, Clayton A.; Pritchett, Emily J.; Deelman, Peter W.; Poplawsky, Jonathan D.

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Metamorphic materials for quantum computing

MRS BULLETIN

IF4.9

2016-03-14

PREAI

Deelman, Peter W.; Edge, Lisa F.; Jackson, Clayton A.

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Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films

APPLIED PHYSICS LETTERS

IF3.6

2011-04-14

PREAI

Zafar, Sufi; Jagannathan, Hemanth; Edge, Lisa F.; Gupta, Devendra

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Materials and electrical characterization of physical vapor deposited LaxLu1-xO3 thin films on 300 mm silicon

APPLIED PHYSICS LETTERS

IF3.6

2011-03-23

PREAI

Edge, L. F.; Vo, T.; Paruchuri, V. K.; Iijima, R.; Bruley, J.; Jordan-Sweet, J.; Linder, B. P.; Kellock, A. J.; Tsunoda, T.; Shinde, S. R.

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Stability of terbium scandate on Si(100)

APPLIED PHYSICS LETTERS

IF3.6

2010-11-03

OAAI

Copel, M.; Bojarczuk, N.; Edge, L. F.; Guha, S.

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Si-compatible candidates for high-κ dielectrics with the Pbnm perovskite structure

PHYSICAL REVIEW B

IF3.7

2010-08-03

OAAI

Coh, Sinisa; Heeg, Tassilo; Haeni, J. H.; Biegalski, M. D.; Lettieri, J.; Edge, L. F.; O'Brien, K. E.; Bernhagen, M.; Reiche, P.; Uecker, R.; Trolier-McKinstry, S.; Schlom, Darrell G.; Vanderbilt, David

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Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La,Nd,Gd,Lu): Effect of 4f-shell occupancy

APPLIED PHYSICS LETTERS

IF3.6

2008-11-11

PREAI

Afanas'ev, V. V.; Badylevich, M.; Stesmans, A.; Laha, A.; Osten, H. J.; Fissel, A.; Tian, W.; Edge, L. F.; Schlom, D. G.

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Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance

APPLIED PHYSICS LETTERS

IF3.6

2008-09-09

PREAI

Stesmans, A.; Somers, P.; Afanas'ev, V. V.; Tian, W.; Edge, L. F.; Schlom, D. G.

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Conduction band energies and hot-electron transport characteristics of epitaxial Sc2O3/Si (111) studied by ballistic electron emission microscopy and internal photoemission

APPLIED PHYSICS LETTERS

IF3.6

2007-07-24

PREAI

Cai, W.; Stone, S. E.; Pelz, J. P.; Edge, L. F.; Schlom, D. G.

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Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3

APPLIED PHYSICS LETTERS

IF3.6

2007-01-30

PREAI

Wang, M.; He, W.; Ma, T. P.; Edge, L. F.; Schlom, D. G.

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Thermal stability of lanthanum scandate dielectrics on Si(100)

APPLIED PHYSICS LETTERS

IF3.6

2006-12-12

PREAI

Sivasubramani, P.; Lee, T. H.; Kim, M. J.; Kim, J.; Gnade, B. E.; Wallace, R. M.; Edge, L. F.; Schlom, D. G.; Stevie, F. A.; Garcia, R.; Zhu, Z.; Griffis, D. P.

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Nature and stability of the (100)Si/LaAlO3 interface probed by paramagnetic defects

APPLIED PHYSICS LETTERS

IF3.6

2006-09-14

PREAI

Stesmans, A.; Clemer, K.; Afanas'ev, V. V.; Edge, L. F.; Schlom, D. G.

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Research Directions