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J

J. Massies

alcatel-lucent

57H-index
599Paper Count
1.3WCitation Count
Published Papers 93
Publication Date
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Displacement Talbot lithography for nano-engineering of III-nitride materials
errMICROSYSTEMS & NANOENGINEERING
IF9.9
err2019-12-02
err40
errOAAI
errCoulon, Pierre-Marie; Damilano, Benjamin; Alloing, Blandine; Chausse, Pierre; Walde, Sebastian; Enslin, Johannes; Armstrong, Robert; Vezian, Stephane; Hagedorn, Sylvia; Wernicke, Tim; Massies, Jean; Zuniga-Perez, Jesus; Weyers, Markus; Kneissl, Michael; Shields, Philip A.
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Enhanced excitonic emission efficiency in porous GaN
errSCIENTIFIC REPORTS
IF3.9
err2018-10-25
err15
errOAAI
errThi Huong Ngo; Gil, Bernard; Shubina, Tatiana V.; Damilano, Benjamin; Vezian, Stephane; Valvin, Pierre; Massies, Jean
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Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2018-02-01
err6
PREAI
errMatta, Samuel; Brault, Julien; Thi-Huong Ngo; Damilano, Benjamin; Leroux, Mathieu; Massies, Jean; Gil, Bernard
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Photoluminescence properties of porous GaN and (Ga, In) N/GaN single quantum well made by selective area sublimation
errOPTICS EXPRESS
IF3.3
err2017-12-21
err15
errOAAI
errDamilano, B.; Vezian, S.; Massies, J.
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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication
errNANO LETTERS
IF9.1
err2016-02-24
err52
PREAI
errDamilano, B.; Vezian, S.; Brault, J.; Alloing, B.; Massies, J.
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Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111)
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2011-12-01
err5
PREAI
errMoshe, O.; Rich, D. H.; Damilano, B.; Massies, J.
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Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)
errAPPLIED PHYSICS LETTERS
IF3.6
err2011-02-09
err7
PREAI
errMoshe, O.; Rich, D. H.; Damilano, B.; Massies, J.
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Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers
errAPPLIED PHYSICS LETTERS
IF3.6
err2010-04-21
err51
PREAI
errCarras, M.; Maisons, G.; Simozrag, B.; Garcia, M.; Parillaud, O.; Massies, J.; Marcadet, X.
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Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells
errPHYSICAL REVIEW B
IF3.7
err2009-01-30
err11
PREAI
errNatali, F.; Cordier, Y.; Massies, J.; Vezian, S.; Damilano, B.; Leroux, M.
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Optical investigations of bulk and multi-quantum well nitride-based microcavities
errOPTICAL MATERIALS
IF4.2
err2009-01-01
err5
PREAI
errReveret, F.; Medard, F.; Disseix, P.; Leymarie, J.; Mihailovic, M.; Vasson, A.; Sellers, I. R.; Semond, F.; Leroux, M.; Massies, J.
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Monolithic white light emitting diodes using a (Ga,InN/GaN multiple quantum well light converter
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-09-12
err33
PREAI
errF. Natali; B. Damilano; Sébastien Chenot; P. de Mierry; J. Brault; A. Dussaigne; J. Massies; Pierre Demolon; T. Huault
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Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2008-07-04
err4
errOAAI
errMontes, M.; Hierro, A.; Ulloa, J. M.; Guzman, A.; Damilano, B.; Hugues, M.; Al Khalfioui, M.; Duboz, J-Y; Massies, J.
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Layer-by-layer epitaxial growth of Mg on GaN(0001)
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-06-12
err8
PREAI
errPezzagna, S.; Vezian, S.; Brault, J.; Massies, J.
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Influence of the mirrors on the strong coupling regime in planar GaN microcavities
errPHYSICAL REVIEW B
IF3.7
err2008-05-02
err22
errOAAI
errReveret, F.; Disseix, P.; Leymarie, J.; Vasson, A.; Semond, F.; Leroux, M.; Massies, J.
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Effect of uniaxial stress on the polarization of light emitted from GaN/AlN quantum dots grown on Si(111)
errPHYSICAL REVIEW B
IF3.7
err2008-04-23
err14
PREAI
errMoshe, O.; Rich, D. H.; Damilano, B.; Massies, J.
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Blue-light emission from GaN/Al0.5Ga0.5N quantum dots
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-02-07
err42
PREAI
errHuault, T.; Brault, J.; Natali, F.; Damilano, B.; Lefebvre, D.; Nguyen, L.; Leroux, M.; Massies, J.
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Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-01-31
err18
PREAI
errStokker-Cheregi, F.; Vinattieri, A.; Semond, F.; Leroux, M.; Sellers, I. R.; Massies, J.; Solnyshkov, D.; Malpuech, G.; Colocci, M.; Gurioli, M.
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Optical determination of the effective wetting layer thickness and composition in InAs/Ga(In)As quantum dots
errPHYSICAL REVIEW B
IF3.7
err2007-08-21
err32
PREAI
errHugues, M.; Teisseire, M.; Chauveau, J.-M.; Vinter, B.; Damilano, B.; Duboz, J.-Y.; Massies, J.
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Polariton emission in GaN microcavities
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2007-05-01
err4
PREAI
errGurioli, M.; Zamfirescu, M.; Stokker-Cheregi, F.; Vinattieri, A.; Sellers, I. R.; Semond, F.; Leroux, M.; Massies, J.
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Polariton thermalization in GaN microcavities in the strong light-matter coupling regime
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2007-05-01
err2
PREAI
errStokker-Cheregi, F.; Zamfirescu, M.; Vinattieri, A.; Gurioli, M.; Sellers, I.; Semond, F.; Leroux, M.; Massies, J.
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Research Directions

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