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SaveShare Save In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared
Wu, Enping; Wu, Di; Jia, Cheng; Wang, Yuange; Yuan, Huiyu; Zeng, Longhui; Xu, Tingting; Shi, Zhifeng; Tian, Yongtao; Li, Xinjian Share Save In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivityZhuo, Ranran; Zeng, Longhui; Yuan, Huiyu; Wu, Di; Wang, Yuange; Shi, Zhifeng; Xu, Tingting; Tian, Yongtao; Li, Xinjian; Tsang, Yuen Hong Share Save Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared PhotodetectorWu, Di; Wang, Yuange; Zeng, Longhui; Jia, Cheng; Wu, Enping; Xu, Tingting; Shi, Zhifeng; Tian, Yongtao; Li, Xinjian; Tsang, Yuen Hong Share Save Photovoltaic high-performance broadband photodetector based on MoS2/Si nanowire array heterojunctionWu, Di; Lou, Zhenhua; Wang, Yuange; Yao, Zhiqiang; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian; Tsang, Yuen Hong Share Save Share Save Share Save A room-temperature near-infrared photodetector based on a MoS2/CdTe p-n heterojunction with a broadband response up to 1700 nmWang, Yuange; Huang, Xiaowen; Wu, Di; Zhuo, Ranran; Wu, Enping; Jia, Cheng; Shi, Zhifeng; Xu, Tingting; Tian, Yongtao; Li, Xinjian Share Save Share Save 
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