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J

John R. Williams

massachusetts institute of technology

58H-index
954Paper Count
1.3WCitation Count
Published Papers 24
Publication Date
Traumatic Brain Injury in Relation to Health Literacy and Access to Care: An All of Us Analysis
err2025-04-01
err0
PREAI
errCook, Richard; Ran, Kathleen; Gundapaneni, Naren; Williams, John R.; Azad, Tej D.
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United States Medicolegal Progress and Innovation in Telemedicine in the Age of COVID-19: A Primer for Neurosurgeons
err2021-09-01
err7
errOAAI
errCruz, Michael J.; Nieblas-Bedolla, Edwin; Young, Christopher C.; Feroze, Abdullah H.; Williams, John R.; Ellenbogen, Richard G.; Levitt, Michael R.
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Detection of sub-500-μm cracks in multicrystalline silicon wafer using edge-illuminated dark-field imaging to enable thin solar cell manufacturing
err2019-07-01
err17
errOAAI
errWieghold, Sarah; Liu, Zhe; Raymond, Samuel J.; Meyer, Luke T.; Williams, John R.; Buonassisi, Tonio; Sachs, Emanuel M.
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Maximizing the value of pressure data in saline aquifer characterization
err2017-11-01
err8
errOAAI
errYoon, Seonkyoo; Williams, John R.; Juanes, Ruben; Kang, Peter K.
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Mixed-mode fracture modeling with smoothed particle hydrodynamics
err2016-10-01
err29
PREAI
errDouillet-Grellier, Thomas; Jones, Bruce D.; Pramanik, Ranjan; Pan, Kai; Albaiz, Abdulaziz; Williams, John R.
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Hyper-Reduced-Order Models for Subsurface Flow Simulation
err2016-06-08
err11
PREAI
errYoon, Seonkyoo; Alghareeb, Zeid M.; Williams, John R.
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Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection
err2012-06-07
err45
PREAI
errThapa, Resham; Alur, Siddharth; Kim, Kyusang; Tong, Fei; Sharma, Yogesh; Kim, Moonil; Ahyi, Claude; Dai, Jing; Hong, Jong Wook; Bozack, Michael; Williams, John; Son, Ahjeong; Dabiran, Amir; Park, Minseo
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Effects of proton irradiation on nanocluster precipitation in ferritic steel containing fcc alloying additions
err2012-04-01
err66
PREAI
errZhang, Z. W.; Liu, C. T.; Wang, X-L.; Miller, M. K.; Ma, D.; Chen, G.; Williams, J. R.; Chin, B. A.
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BALANCING THE SUPPLY AND DEMAND OF SEX ACTS: IMPLICATIONS FOR MODELLING THE HIV EPIDEMIC AMONG MEN WHO HAVE SEX WITH MEN IN SOUTHERN INDIA
err2011-07-10
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errOAAI
errMitchell, K.; Foss, A.; Prudden, H.; Williams, J.; Johnson, H.; Pickles, M.; Phillips, A.; Ramesh, B.; Washington, R.; Vickerman, P.
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ASSESSING THE IMPACT OF A FSW TARGETED HIV INTERVENTION PROGRAMME ON INCIDENCE AND PREVALENCE IN COTONOU, BENIN
err2011-07-10
err0
errOAAI
errWilliams, J.; Boily, M. C.; Lowndes, C.; Camden, S.; Demers, E.; Minani, I.; Zannou, M.; Anagonou, S.; Labbe, A. C.; Alary, M.
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Structure and stoichiometry of (0001) 4H-SiC/oxide interface
err2010-08-19
err42
PREAI
errZhu, Xingguang; Lee, Hang Dong; Feng, Tian; Ahyi, Ayayi C.; Mastrogiovanni, Daniel; Wan, Alan; Garfunkel, Eric; Williams, John R.; Gustafsson, Torgny; Feldman, Leonard C.
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Ultrashallow defect states at SiO2/4H-SiC interfaces
err2008-03-13
err49
PREAI
errDhar, S.; Chen, X. D.; Mooney, P. M.; Williams, J. R.; Feldman, L. C.
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Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC
err2007-10-09
err27
PREAI
errRozen, John; Dhar, Sarit; Pantelides, S. T.; Feldman, L. C.; Wang, Sanwu; Williams, J. R.; Afanas'ev, V. V.
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Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors
err2007-06-20
err45
PREAI
errMarinella, M. J.; Schroder, D. K.; Isaacs-Smith, T.; Ahyi, A. C.; Williams, J. R.; Chung, G. Y.; Wan, J. W.; Loboda, M. J.
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Nitridation of the SiO2/4H-SiC interface studied by surface-enhanced Raman spectroscopy
err2007-04-01
err13
PREAI
errChoi, S. H.; Wang, D.; Williams, J. R.; Park, M.; Lu, W.; Dhar, S.; Feldman, L. C.
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