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Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics Ramiro, I.; Villa, J.; Tablero, C.; Antolin, E.; Luque, A.; Marti, A.; Hwang, J.; Phillips, J.; Martin, A. J.; Millunchick, J. Share Save
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Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Salii, Roman A.; Nadtochiy, Alexey M.; Payusov, Alexey S.; Brunkov, Pavel N.; Nevedomsky, Vladimir N.; Shvarts, Maxim Z.; Marti, Antonio; Andreev, Viacheslav M.; Luque, Antonio Share Save
Demonstration of the operation principles of intermediate band solar cells at room temperature Lopez, E.; Datas, A.; Ramiro, I.; Linares, P. G.; Antolin, E.; Artacho, I.; Marti, A.; Luque, A.; Shoji, Y.; Sogabe, T.; Ogura, A.; Okada, Y. Share Save
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Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap Olea, J.; Lopez, E.; Antolin, E.; Marti, A.; Luque, A.; Garcia-Hemme, E.; Pastor, D.; Garcia-Hernansanz, R.; del Prado, A.; Gonzalez-Diaz, G. Share Save
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Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept Linares, P. G.; Lopez, E.; Ramiro, I.; Datas, A.; Antolin, E.; Shoji, Y.; Sogabe, T.; Okada, Y.; Marti, A.; Luque, A. Share Save
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