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SaveShare Save The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
Fu, Kai; Fu, Houqiang; Deng, Xuguang; Su, Po-Yi; Liu, Hanxiao; Hatch, Kevin; Cheng, Chi-Yin; Messina, Daniel; Meidanshahi, Reza Vatan; Peri, Prudhvi; Yang, Chen; Yang, Tsung-Han; Montes, Jossue; Zhou, Jingan; Qi, Xin; Goodnick, Stephen M.; Ponce, Fernando A.; Smith, David J.; Nemanich, Robert; Zhao, Yuji Share Save Share Save Supercontinuum Generation in High Order Waveguide Mode with near-Visible Pumping Using Aluminum Nitride WaveguidesChen, Hong; Zhou, Jingan; Li, Dongying; Chen, Dongyu; Vinod, Abhinav K.; Fu, Houqiang; Huang, Xuanqi; Yang, Tsung-Han; Montes, Jossue A.; Fu, Kai; Yang, Chen; Ning, Cun-Zheng; Wong, Chee Wei; Armani, Andrea M.; Zhao, Yuji Share Save AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectricYang, Tsung-Han; Brown, Jesse; Fu, Kai; Zhou, Jingan; Hatch, Kevin; Yang, Chen; Montes, Jossue; Qi, Xin; Fu, Houqiang; Nemanich, Robert J.; Zhao, Yuji Share Save Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperaturesHuang, Xuanqi; Li, Dongying; Su, Po-Yi; Fu, Houqiang; Chen, Hong; Yang, Chen; Zhou, Jingan; Qi, Xin; Yang, Tsung-Han; Montes, Jossue; Deng, Xuguang; Fu, Kai; DenBaars, Steven P.; Nakamura, Shuji; Ponce, Fernando A.; Ning, Cun-Zheng; Zhao, Yuji Share Save Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatmentYang, Chen; Fu, Houqiang; Su, Po-Yi; Liu, Hanxiao; Fu, Kai; Huang, Xuanqi; Yang, Tsung-Han; Chen, Hong; Zhou, Jingan; Deng, Xuguang; Montes, Jossue; Qi, Xin; Ponce, Fernando A.; Zhao, Yuji Share Save Demonstration of low loss β-Ga2O3 optical waveguides in the UV-NIR spectraZhou, Jingan; Chen, Hong; Fu, Houqiang; Fu, Kai; Deng, Xuguang; Huang, Xuanqi; Yang, Tsung-Han; Montes, Jossue A.; Yang, Chen; Qi, Xin; Zhang, Baoshun; Zhang, Xiaodong; Zhao, Yuji Share Save Share Save Share Save Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor depositionFu, Kai; Fu, Houqiang; Liu, Hanxiao; Alugubelli, Shanthan Reddy; Yang, Tsung-Han; Huang, Xuanqi; Chen, Hong; Baranowski, Izak; Montes, Jossue; Ponce, Fernando A.; Zhao, Yuji Share Save Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layersHuang, Xuanqi; Chen, Hong; Fu, Houqiang; Baranowski, Izak; Montes, Jossue; Yang, Tsung-Han; Fu, Kai; Gunning, Brendan P.; Koleske, Daniel D.; Zhao, Yuji Share Save Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stressHuang, Xuanqi; Fu, Houqiang; Chen, Hong; Lu, Zhijian; Baranowski, Izak; Montes, Jossue; Yang, Tsung-Han; Gunning, Brendan P.; Koleske, Dan; Zhao, Yuji Share Save Share Save Share Save Share Save Share Save Share Save Share Save 
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