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SaveThe impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
Fu, Kai; Fu, Houqiang; Deng, Xuguang; Su, Po-Yi; Liu, Hanxiao; Hatch, Kevin; Cheng, Chi-Yin; Messina, Daniel; Meidanshahi, Reza Vatan; Peri, Prudhvi; Yang, Chen; Yang, Tsung-Han; Montes, Jossue; Zhou, Jingan; Qi, Xin; Goodnick, Stephen M.; Ponce, Fernando A.; Smith, David J.; Nemanich, Robert; Zhao, Yuji Share Save Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperaturesHuang, Xuanqi; Li, Dongying; Su, Po-Yi; Fu, Houqiang; Chen, Hong; Yang, Chen; Zhou, Jingan; Qi, Xin; Yang, Tsung-Han; Montes, Jossue; Deng, Xuguang; Fu, Kai; DenBaars, Steven P.; Nakamura, Shuji; Ponce, Fernando A.; Ning, Cun-Zheng; Zhao, Yuji Share Save Share Save Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatmentYang, Chen; Fu, Houqiang; Su, Po-Yi; Liu, Hanxiao; Fu, Kai; Huang, Xuanqi; Yang, Tsung-Han; Chen, Hong; Zhou, Jingan; Deng, Xuguang; Montes, Jossue; Qi, Xin; Ponce, Fernando A.; Zhao, Yuji Share Save Share Save Share Save Share Save Share Save Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor depositionFu, Kai; Fu, Houqiang; Liu, Hanxiao; Alugubelli, Shanthan Reddy; Yang, Tsung-Han; Huang, Xuanqi; Chen, Hong; Baranowski, Izak; Montes, Jossue; Ponce, Fernando A.; Zhao, Yuji Share Save Share Save Sub 250nm deep-UV AlGaN/AlN distributed Bragg reflectorsDetchprohm, Theeradetch; Liu, Yuh-Shiuan; Mehta, Karan; Wang, Shuo; Xie, Hongen; Kao, Tsung-Ting; Shen, Shyh-Chiang; Yoder, Paul D.; Ponce, Fernando A.; Dupuis, Russell D. Share Save Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor depositionLiu, Yuh-Shiuan; Wang, Shuo; Xie, Hongen; Kao, Tsung-Ting; Mehta, Karan; Jia, Xiao Jia; Shen, Shyh-Chiang; Yoder, P. Douglas; Ponce, Fernando A.; Detchprohm, Theeradetch; Dupuis, Russell D. Share Save Share Save Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrateLi, Xiao-Hang; Kao, Tsung-Ting; Satter, Md. Mahbub; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Shen, Shyh-Chiang; Yoder, P. Douglas; Fischer, Alec M.; Ponce, Fernando A.; Detchprohm, Theeradetch; Dupuis, Russell D. Share Save Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substratesLi, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Yoder, P. Douglas; Dupuis, Russell D.; Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.; Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael Share Save Applications of electron microscopy in collaborative industrial researchRoss, FM; Krishnan, KM; Thangaraj, N; Farrow, RFC; Marks, RF; Cebollada, A; Parkin, SSP; Toney, MF; Huffman, M; DeAraujo, CAP; McMillan, LD; Cuchiaro, J; Scott, MC; Echer, C; Ponce, F; OKeefe, MA; Nelson, EC Share Save Share Save Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrorsKao, Tsung-Ting; Liu, Yuh-Shiuan; Satter, Md. Mahbub; Li, Xiao-Hang; Lochner, Zachary; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D.; Shen, Shyh-Chiang; Ryou, Jae-Hyun; Fischer, Alec M.; Wei, Yong; Xie, Hongen; Ponce, Fernando A. Share Save Share Save 
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