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SaveShare Save Effects of O2 Surface Treatment on Device Performance of AlGaN/GaN HEMTs with In Situ Crystalline SiN Cap Layer
Luo, Xin; Zhang, Tieying; Cui, Peng; Linewih, Handoko; Qi, Kaifa; Yan, Xinkun; Chen, Siheng; Wang, Liu; Dai, Jiacheng; Lin, Zhaojun; Xu, Xiangang; Han, Jisheng Share Save Share Save Share Save Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical-mechanical polishingLi, Qiubo; Wang, Shouzhi; Liu, Lei; Song, Kepeng; Yu, Jiaoxian; Wang, Guodong; Liu, Jingliang; Cui, Peng; Chen, Siheng; Sun, Defu; Wang, Zhongxin; Xu, Xiangang; Zhang, Lei Share Save Share Save Share Save Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layerLuo, Xin; Cui, Peng; Linewih, Handoko; Zhang, Tieying; Yan, Xinkun; Chen, Siheng; Wang, Liu; Dai, Jiacheng; Lin, Zhaojun; Xu, Xiangang; Han, Jisheng Share Save Share Save Share Save Influence of post fabrication annealing on device performance of InAlN/ GaN high electron mobility transistorsLuo, Xin; Cui, Peng; Linewih, Handoko; Cheong, Kuan Yew; Xu, Mingsheng; Chen, Siheng; Wang, Liu; Sun, Jiuji; Dai, Jiacheng; Xu, Xiangang; Han, Jisheng Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save 
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