Hussain Alsalman - Publications, H-index & Citations

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Hussain Alsalman

institute for basic science - korea (ibs)

9H-index

24Paper Count

2.0KCitation Count

Published Papers 12

Publication Date

Spatially composition-graded monolayer tungsten selenium telluride

APPLIED PHYSICS LETTERS

IF3.6

2022-06-07

OAAI

Xu, Kai; Hao, Zheng; Alsalman, Hussain; Kang, Junzhe; Chen, Changqiang; Wang, Zhiyu; Zhao, Zijing; Low, Tony; Zhu, Wenjuan

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Methodological framework for materials discovery using machine learning

PHYSICAL REVIEW MATERIALS

IF3.4

2022-04-14

PREAI

Lee, Eng Hock; Jiang, Wei; Alsalman, Hussain; Low, Tony; Cherkassky, Vladimir

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Simple linear response model for predicting energy band alignment of two-dimensional vertical heterostructures

PHYSICAL REVIEW B

IF3.7

2021-05-17

OAAI

Azadani, Javad G.; Lee, Seungjun; Kim, Hyeong-Ryul; Alsalman, Hussain; Kwon, Young-Kyun; Tersoff, Jerry; Low, Tony

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Self-heating controlled current-voltage and noise characteristics in graphene

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-12-21

PREAI

Ardaravicius, Linas; Kiprijanovic, Oleg; Alsalman, Hussain; Kwak, Joon Young

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Bandgap engineering of two-dimensional semiconductor materials

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2020-08-24

823

PREAI

Chaves, A.; Azadani, J. G.; Alsalman, Hussain; da Costa, D. R.; Frisenda, R.; Chaves, A. J.; Song, Seung Hyun; Kim, Y. D.; He, Daowei; Zhou, Jiadong; Castellanos-Gomez, A.; Peeters, F. M.; Liu, Zheng; Hinkle, C. L.; Oh, Sang-Hyun; Ye, Peide D.; Koester, Steven J.; Lee, Young Hee; Avouris, Ph.; Wang, Xinran; Low, Tony

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Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition (vol 10, pg 21374, 2018)

NANOSCALE

IF5.1

2019-01-01

OAAI

Pandey, Sushil Kumar; Alsalman, Hussain; Azadani, Javad G.; Izquierdo, Nezhueyotl; Low, Tony; Campbell, Stephen A.

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Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

NANOSCALE

IF5.1

2018-01-01

PREAI

Pandey, Sushil Kumar; Alsalman, Hussain; Azadani, Javad G.; Izquierdo, Nezhueyotl; Low, Tony; Campbell, Stephen A.

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Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking

ACS NANO

IF16

2017-11-22

110

PREAI

Ji, Yanxin; Calderon, Brian; Han, Yimo; Cueva, Paul; Jungwirth, Nicholas R.; Alsalman, Hussain A.; Hwang, Jeonghyun; Fuchs, Gregory D.; Muller, David A.; Spencer, Michael G.

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Long wavelength optical response of graphene-MoS2 heterojunction

APPLIED PHYSICS LETTERS

IF3.6

2016-03-03

PREAI

Kwak, Joon Young; Hwang, Jeonghyun; Calderon, Brian; Alsalman, Hussain; Spencer, Michael G.

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Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts

NANO LETTERS

IF9.1

2014-07-09

195

PREAI

Kwak, Joon Young; Hwang, Jeonghyun; Calderon, Brian; Alsalman, Hussain; Munoz, Nini; Schutter, Brian; Spencer, Michael G.

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A universal transfer route for graphene

NANOSCALE

IF5.1

2014-01-01

OAAI

Gorantla, Sandeep; Bachmatiuk, Alicja; Hwang, Jeonghyun; Alsalman, Hussain A.; Kwak, Joon Young; Seyller, Thomas; Eckert, Juergen; Spencer, Michael G.; Ruemmeli, Mark H.

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van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst

ACS NANO

IF16

2012-12-26

241

PREAI

Hwang, Jeonghyun; Kim, Moonkyung; Campbell, Dorr; Alsalman, Hussain A.; Kwak, Joon Young; Shivaraman, Shriram; Woll, Arthur R.; Singh, Arunima K.; Hennig, Richard G.; Gorantla, Sandeep; Ruemmeli, Mark H.; Spencer, Michael G.

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Research Directions