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SaveDistributed polarization-doped GaN p-n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV
Nomoto, Kazuki; Li, Wenshen; Song, Bo; Hu, Zongyang; Zhu, Mingda; Qi, Meng; Protasenko, Vladimir; Zhang, Zexuan; Pan, Ming; Gao, Xiang; Marchand, Hugues; Johnson, Wayne; Jena, Debdeep; Xing, Huili Grace Share Save Share Save Share Save Share Save Strained GaN quantum-well FETs on single crystal bulk AlN substratesQi, Meng; Li, Guowang; Ganguly, Satyaki; Zhao, Pei; Yan, Xiaodong; Verma, Jai; Song, Bo; Zhu, Mingda; Nomoto, Kazuki; Xing, Huili (Grace); Jena, Debdeep Share Save Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdownHu, Zongyang; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Qi, Meng; Pan, Ming; Gao, Xiang; Protasenko, Vladimir; Jena, Debdeep; Xing, Huili Grace Share Save High breakdown single-crystal GaN p-n diodes by molecular beam epitaxyQi, Meng; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Zhao, Yuning; Protasenko, Vladimir; Song, Bo; Yan, Xiaodong; Li, Guowang; Verma, Jai; Bader, Samuel; Fay, Patrick; Xing, Huili Grace; Jena, Debdeep Share Save Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopesQi, Meng; Li, Guowang; Protasenko, Vladimir; Zhao, Pei; Verma, Jai; Song, Bo; Ganguly, Satyaki; Zhu, Mingda; Hu, Zongyang; Yan, Xiaodong; Mintairov, Alexander; Xing, Huili Grace; Jena, Debdeep Share Save Share Save Share Save 
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