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SaveShare Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures
Shi, Hangning; Ding, Jiaxin; Qin, Qingcheng; Yi, Ailun; Sun, Jialiang; Suga, Tadatomo; Yi, Juemin; Wang, Jianfeng; Xu, Ke; Zhou, Min; Huang, Kai; You, Tiangui; Ou, Xin Share Save Share Save Thermal Transport Properties of β-Ga2O3 Thin Films on Si and SiC Substrates Fabricated by an Ion-Cutting ProcessXu, Wenhui; Zhao, Tiancheng; Zhang, Lianghui; Liu, Kang; Sun, Huarui; Qu, Zhenyu; You, Tiangui; Yi, Ailun; Huang, Kai; Han, Genquan; Mu, Fengwen; Suga, Tadatomo; Ou, Xin; Hao, Yue Share Save Share Save Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technologyShi, Hangning; Yi, Ailun; Ding, Jiaxin; Liu, Xudong; Qin, Qingcheng; Yi, Juemin; Hu, Junjie; Wang, Miao; Cai, Demin; Wang, Jianfeng; Xu, Ke; Mu, Fengwen; Suga, Tadatomo; Heller, Rene; Wang, Mao; Zhou, Shengqiang; Xu, Wenhui; Huang, Kai; You, Tiangui; Ou, Xin Share Save Share Save Share Save ReS2 on GaN Photodetector Using H+ Ion-Cut TechnologyLiu, Xinke; Zhou, Jie; Luo, Jiangliu; Shi, Hangning; You, Tiangui; Ou, Xin; Botcha, Venkatadivakar; Mu, Fengwen; Suga, Tadatomo; Wang, Xinzhong; Huang, Shuangwu Share Save A novel strategy for GaN-on-diamond device with a high thermal boundary conductanceMu, Fengwen; Xu, Bin; Wang, Xinhua; Gao, Runhua; Huang, Sen; Wei, Ke; Takeuchi, Kai; Chen, Xiaojuan; Yin, Haibo; Wang, Dahai; Yu, Jiahan; Suga, Tadatomo; Shiomi, Junichiro; Liu, Xinyu Share Save 
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