arrow
Back
R

Raphael Behrle

Technische Universitat Wien

5H-index
17Paper Count
73Citation Count
Published Papers 5
Publication Date
Understanding the Electronic Transport of Al-Si and Al-Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy
err2024-04-02
err0
errOAAI
errBehrle, Raphael; Murphey, Corban G. E.; Cahoon, James F.; Barth, Sven; den Hertog, Martien I.; Weber, Walter M.; Sistani, Masiar
errShare
errSave
Bias-tunable temperature coefficient of resistance in Ge transistors
err2024-02-29
err0
errOAAI
errBehrle, R.; Smoliner, J.; Wind, L.; Nazzari, D.; Lugstein, A.; Weber, W. M.; Sistani, M.
errShare
errSave
Low-frequency noise in quasi-ballistic monolithic Al-Ge-Al nanowire field effect transistors
err2023-06-13
err1
errOAAI
errBehrle, R.; Sistani, M.; Lugstein, A.; Momtaz, Z. Sadre; den Hertog, M. I.; Pogany, D.; Weber, W. M.
errShare
errSave
Electrical and Structural Properties of Si1-xGex Nanowires Prepared from a Single-Source Precursor
err2023-02-04
err4
errOAAI
errBehrle, Raphael; Krause, Vanessa; Seifner, Michael S.; Koestler, Benedikt; Dick, Kimberly A.; Wagner, Matthias; Sistani, Masiar; Barth, Sven
errShare
errSave