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SaveShare Save Share Save Investigation of gate conduction mechanisms in p-NiO gate HEMTs with a type-II band aligned NiO/AlGaN heterojunction
Liu, Huaize; Peng, Yanghu; Guo, Hui; Sun, Na; Gong, Ruiling; Qiao, Guang; Shao, Pengfei; Ye, Jiandong; Zhang, Rong; Chen, Dunjun Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substratesLiu, B.; Zhang, R.; Xie, Z. L.; Liu, C. X.; Kong, J. Y.; Yao, J.; Liu, Q. J.; Zhang, Z.; Fu, D. Y.; Xiu, X. Q.; Lu, H.; Chen, P.; Han, P.; Gu, S. L.; Shi, Y.; Zheng, Y. D.; Zhou, J.; Zhou, S. M. Share Save 
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