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SaveBoosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers
Zhang, Haochen; Sun, Yue; Hu, Kunpeng; Yang, Lei; Liang, Kun; Xing, Zhanyong; Wang, Hu; Zhang, Mingshuo; Yu, Huabin; Fang, Shi; Kang, Yang; Sun, Haiding Share Save Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTsZhang, Haochen; Chen, Yao; Sun, Yue; Yang, Lei; Hu, Kunpeng; Huang, Zhe; Liang, Kun; Xing, Zhanyong; Wang, Hu; Zhang, Mingshuo; Guo, Shiping; Sun, Haiding Share Save Share Save DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperaturesZeng, Bolun; Zhang, Haochen; Luo, Chao; Xiang, Zikun; Zhang, Yuanke; Wen, Mingjie; Xue, Qiwen; Hu, Sirui; Sun, Yue; Yang, Lei; Sun, Haiding; Guo, Guoping Share Save Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistorsYang, Lei; Zhang, Haochen; Sun, Yue; Hu, Kunpeng; Xing, Zhanyong; Liang, Kun; Fang, Shi; Wang, Danhao; Yu, Huabin; Kang, Yang; Sun, Haiding Share Save Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented anglesZhang, Haochen; Sun, Yue; Song, Kang; Xing, Chong; Yang, Lei; Wang, Danhao; Yu, Huabin; Xiang, Xueqiang; Gao, Nan; Xu, Guangwei; Sun, Haiding; Long, Shibing Share Save Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6x107 A/WZhang, Haochen; Liang, Fangzhou; Song, Kang; Xing, Chong; Wang, Danhao; Yu, Huabin; Huang, Chen; Sun, Yue; Yang, Lei; Zhao, Xiaolong; Sun, Haiding; Long, Shibing Share Save 
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