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P. Prystawko

Institute of High Pressure Physics PAS

25H-index
207Paper Count
2.1KCitation Count
Published Papers 49
Publication Date
Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures
errSensors
IF3.5
err2026-04-27
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errOAAI
errMaxim Moscotin; Justinas Jorudas; Pawel Prystawko; Miroslav Saniuk; Vitalij Kovalevskij; Irmantas Kašalynas
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Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
err2026-03-26
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errOAAI
errB Orfao; M Abou Daher; H Bouillaud; Y Roelens; P Prystawko; R Kucharski; M Bockowski; M Zaknoune
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Photo-Excited Carrier Dynamics in Ammonothermal Mn-Compensated GaN Semiconductor
err2024-12-07
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errOAAI
errScajev, Patrik; Prystawko, Pawel; Kucharski, Robert; Kasalynas, Irmantas
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Absorption Spectra of AlGaN/GaN Terahertz Plasmonic Crystals-Experimental Validation of Analytical Approach
err2024-09-16
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errOAAI
errDub, Maksym; Sai, Pavlo; Prystawko, Pawel; Knap, Wojciech; Rumyantsev, Sergey
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FeGa (0/-) acceptor level as a reference energy level in dilute AlxGa1-xN
err2024-06-03
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PREAI
errKruszewski, P.; Plesiewicz, J.; Grzanka, Sz.; Grzanka, E.; Prystawko, P.; Markevich, V. P.; Peaker, A. R.; Sun, L.; Dawe, C. A.; Halsall, M. P.
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Alloy splitting of the FeGa acceptor level in dilute AlxGa1-xN
err2023-11-29
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errOAAI
errKruszewski, P.; Markevich, V. P.; Peaker, A. R.; Plesiewicz, J.; Prystawko, P.; Halsall, M. P.; Sun, L.
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Ohmic Contact to n-GaN Using RT-Sputtered GaN:O
err2023-08-11
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errOAAI
errMaslyk, Monika; Prystawko, Pawel; Kaminska, Eliana; Grzanka, Ewa; Krysko, Marcin
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Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors
err2022-11-21
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errOAAI
errRehman, A.; Delgado-Notario, J. A.; Sai, P.; But, D. B.; Prystawko, P.; Ivonyak, Y.; Cywinski, G.; Knap, W.; Rumyantsev, S.
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Space-charge domains in n-type GaN epilayers under pulsed electric field
err2022-09-06
err4
PREAI
errBalagula, Roman M.; Subacius, Liudvikas; Jorudas, Justinas; Prystawko, Pawel; Grabowski, Mikolaj; Leszczynski, Michal; Kasalynas, Irmantas
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High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate
err2022-03-11
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errOAAI
errBalagula, Roman M.; Subacius, Liudvikas; Jorudas, Justinas; Janonis, Vytautas; Prystawko, Pawel; Grabowski, Mikolaj; Kasalynas, Irmantas
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Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures
err2022-01-31
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errOAAI
errJorudas, Justinas; Prystawko, Pawel; Simukovic, Artur; Aleksiejunas, Ramunas; Mickevicius, Juras; Krysko, Marcin; Michalowski, Pawel Piotr; Kasalynas, Irmantas
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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
err2021-12-07
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errOAAI
errSchiliro, Emanuela; Giannazzo, Filippo; Di Franco, Salvatore; Greco, Giuseppe; Fiorenza, Patrick; Roccaforte, Fabrizio; Prystawko, Pawel; Kruszewski, Piotr; Leszczynski, Mike; Cora, Ildiko; Pecz, Bela; Fogarassy, Zsolt; Lo Nigro, Raffaella
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Graphene/AlGaN/GaN RF Switch
err2021-10-31
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errOAAI
errYashchyshyn, Yevhen; Bajurko, Pawel; Sobolewski, Jakub; Sai, Pavlo; Przewloka, Aleksandra; Krajewska, Aleksandra; Prystawko, Pawel; Dub, Maksym; Knap, Wojciech; Rumyantsev, Sergey; Cywinski, Grzegorz
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Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting
err2021-07-02
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errOAAI
errSai, P.; Potashin, S. O.; Szola, M.; Yavorskiy, D.; Cywinski, G.; Prystawko, P.; Lusakowski, J.; Ganichev, S. D.; Rumyantsev, S.; Knap, W.; Kachorovskii, V. Yu
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Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics
err2021-06-19
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errOAAI
errDub, Maksym; Sai, Pavlo; Sakowicz, Maciej; Janicki, Lukasz; But, Dmytro B.; Prystawko, Pawel; Cywinski, Grzegorz; Knap, Wojciech; Rumyantsev, Sergey
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Spatial coherence of hybrid surface plasmon-phonon-polaritons in shallow n-GaN surface-relief gratings
err2021-04-21
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errOAAI
errJanonis, Vytautas; Balagula, Roman M.; Grigelionis, Ignas; Prystawko, Pawel; Kasalynas, Irmantas
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AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
err2020-12-20
err23
errOAAI
errJorudas, Justinas; Simukovic, Artur; Dub, Maksym; Sakowicz, Maciej; Prystawko, Pawel; Indrisiunas, Simonas; Kovalevskij, Vitalij; Rumyantsev, Sergey; Knap, Wojciech; Kasalynas, Irmantas
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Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
err2020-09-17
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errOAAI
errDub, Maksym; Sai, Pavlo; Przewloka, Aleksandra; Krajewska, Aleksandra; Sakowicz, Maciej; Prystawko, Pawel; Kacperski, Jacek; Pasternak, Iwona; Cywinski, Grzegorz; But, Dmytro; Knap, Wojciech; Rumyantsev, Sergey
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Investigation of n-type gallium nitride grating for applications in coherent thermal sources
err2020-03-18
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PREAI
errJanonis, Vytautas; Tumenas, Saulius; Prystawko, Pawel; Kacperski, Jacek; Kasalynas, Irmantas
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Low frequency noise and trap density in GaN/AlGaN field effect transistors
err2019-10-29
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errOAAI
errSai, P.; Jorudas, J.; Dub, M.; Sakowicz, M.; Jakstas, V.; But, D. B.; Prystawko, P.; Cywinski, G.; Kasalynas, I.; Knap, W.; Rumyantsev, S.
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