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Verifying the physical role of upper-active-layer on charge transport together with bias stability in bilayer-channel oxide thin-film transistors Lee, Jinuk; Eun, Jun-Su; Na, Jeong-Hyeon; Park, Won; Park, Jun-Hyeong; Feng, Junhao; Jang, Jaewon; Kang, In Man; Park, Jaehoon; Zhang, Xue; Kim, Do-Kyung; Bae, Jin-Hyuk Share Save
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Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors Na, Jeong-Hyeon; Park, Jun-Hyeong; Park, Won; Feng, Junhao; Eun, Jun-Su; Lee, Jinuk; Lee, Sin-Hyung; Jang, Jaewon; Kang, In Man; Kim, Do-Kyung; Bae, Jin-Hyuk Share Save
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Turbulence stabilization in tokamak plasmas with high population of fast ions Kim, D.; Park, S. J.; Choi, G. J.; Cho, Y. W.; Kang, J.; Han, H.; Candy, J.; Belli, E. A.; Hahm, T. S.; Na, Y. -S; Sung, C. Share Save
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Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing Park, Won; Park, Jun-Hyeong; Eun, Jun-Su; Lee, Jinuk; Na, Jeong-Hyeon; Lee, Sin-Hyung; Jang, Jaewon; Kang, In Man; Kim, Do-Kyung; Bae, Jin-Hyuk Share Save
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