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A

A. Stesmans

KU Leuven

59H-index
611Paper Count
1.4WCitation Count
Published Papers 137
Publication Date
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Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2021-05-13
err1
errOAAI
errShlyakhov, I; Achra, S.; Bosman, N.; Asselberghs, I; Huyghebaert, C.; Radu, I; Chai, J.; Yang, M.; Wang, S. J.; Bol, A.; Iakoubovskii, K.; Houssa, M.; Stesmans, A.; Afanas'ev, V. V.
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Ferromagnetism and half-metallicity in two-dimensional MO (M = Ga , In) monolayers induced by hole doping
errPHYSICAL REVIEW MATERIALS
IF3.4
err2020-07-06
err25
errOAAI
errMeng, Ruishen; Houssa, Michel; Iordanidou, Konstantina; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre
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Variations of paramagnetic defects and dopants in geo-MoS2 from diverse localities probed by ESR
errJOURNAL OF CHEMICAL PHYSICS
IF3.1
err2020-06-16
err6
errOAAI
errStesmans, A.; Schoenaers, B.; Afanas'ev, V. V.
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Degradation of sulfamethoxazole by heat-activated persulfate oxidation: Elucidation of the degradation mechanism and influence of process parameters
errCHEMICAL ENGINEERING JOURNAL
IF13.2
err2020-01-01
err106
errOAAI
errMilh, Hannah; Schoenaers, Ben; Stesmans, Andre; Cabooter, Deirdre; Dewil, Raf
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Trap generation in buried oxides of silicon-on-insulator structures by vacuum ultraviolet radiation
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err6
PREAI
errAfanas'ev, VV; Stesmans, A; Revesz, AG; Hughes, HL
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Hydrogen-related leakage currents induced in ultrathin SiO2/Si structures by vacuum ultraviolet radiation
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err35
PREAI
errAfanas'ev, VV; Stesmans, A
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Contact resistance at graphene/MoS2 lateral heterostructures
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-04-23
err23
errOAAI
errHoussa, M.; Iordanidou, K.; Dabral, A.; Lu, A.; Meng, R.; Pourtois, G.; Afanas'ev, V. V.; Stesmans, A.
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Aryl-viologen pentapeptide self-assembled conductive nanofibers
errCHEMICAL COMMUNICATIONS
IF4.2
err2019-01-01
err13
errOAAI
errClarke, David E.; Olesinska, Magdalena; Monch, Tobias; Schoenaers, Ben; Stesmans, Andre; Scherman, Oren A.
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Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism
errCHEMISTRY OF MATERIALS
IF7
err2018-09-17
err65
errOAAI
errGroven, Benjamin; Mehta, Ankit Nalin; Bender, Hugo; Meersschaut, Johan; Nuytten, Thomas; Verdonck, Patrick; Conard, Thierry; Smets, Quentin; Schram, Tom; Schoenaers, Ben; Stesmans, Andre; Afanas'ev, Valeri; Vandervorst, Wilfried; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Delabie, Annelies
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Structural Properties of Al-O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2018-08-15
err30
errOAAI
errHiller, Daniel; Goettlicher, Joerg; Steininger, Ralph; Huthwelker, Thomas; Julin, Jaakko; Munnik, Frans; Wahl, Michael; Bock, Wolfgang; Schoenaers, Ben; Stesmans, Andre; Koenig, Dirk
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Silicene on non-metallic substrates: Recent theoretical and experimental advances
errNANO RESEARCH
IF9
err2018-02-02
err26
PREAI
errScalise, Emilio; Iordanidou, Kostantina; Afanas'ev, Valeri V.; Stesmans, Andre; Houssa, Michel
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Silicene on non-metallic substrates: Recent theoretical and experimental advances (vol 11, pg 1169, 2018)
errNANO RESEARCH
IF9
err2018-02-02
err1
errOAAI
errScalise, Emilio; Iordanidou, Konstantina; Afanas'ev, Valeri V.; Stesmans, Andre; Houssa, Michel
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On the chemistry and electrochemistry of LiPON breakdown
errJOURNAL OF MATERIALS CHEMISTRY A
IF9.5
err2018-01-01
err47
PREAI
errPut, Brecht; Vereecken, Philippe M.; Stesmans, Andre
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Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
errAPL MATERIALS
IF4.5
err2017-11-30
err17
errOAAI
errShlyakhov, I.; Chai, J.; Yang, M.; Wang, S. J.; Afanas'ev, V. V.; Houssa, M.; Stesmans, A.
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Point defects in MoS2: Comparison between first-principles simulations and electron spin resonance experiments
errAPPLIED SURFACE SCIENCE
IF6.9
err2017-09-01
err19
errOAAI
errHoussa, M.; Iordanidou, K.; Pourtois, G.; Afanas'ev, V. V.; Stesmans, A.
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Leakage current induced by surfactant residues in self-assembly based ultralow-k dielectric materials
errAPPLIED PHYSICS LETTERS
IF3.6
err2017-07-21
err10
PREAI
errKrishtab, M.; Afanas'ev, V.; Stesmans, A.; De Gendt, S.
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Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo Sulfurization
errNANOSCALE RESEARCH LETTERS
IF4.1
err2017-04-20
err14
errOAAI
errStesmans, A.; Iacovo, S.; Chiappe, D.; Radu, I.; Huyghebaert, C.; De Gendt, S.; Afanas'ev, V. V.
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ESR study of p-type natural 2H-polytype MoS2 crystals: The As acceptor activity
errAPPLIED PHYSICS LETTERS
IF3.6
err2016-10-27
err18
errOAAI
errStesmans, A.; Iacovo, S.; Afanas'ev, V. V.
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Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport
errNANO RESEARCH
IF9
err2016-08-20
err7
PREAI
errvan den Broek, Bas; Houssa, Michel; Lu, Augustin; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre
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Electrical Characterization of Ultrathin RF-Sputtered LiPON Layers for Nanoscale Batteries
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2016-03-10
err71
PREAI
errPut, Brecht; Vereecken, Philippe M.; Meersschaut, Johan; Sepulveda, Alfonso; Stesmans, Andre
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Research Directions

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