未登录Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques不同原子层沉积技术下Al2O3/GaN MOS电容器的陷阱与可靠性系统分析
Fregolent, Manuel; Tomasi, Marco; De Santi, Carlo; Buffolo, Matteo; Tadmor, Liad; Brusaterra, Enrico; Treidel, Eldad Bahat; Cester, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
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收藏Controlled Formation of Skyrmion Bags拓扑斯夸格的受控形成
Kern, LM; Kuchkin, VM; Deinhart, V; Klose, C; Sidiropoulos, T; Auer, M; Gaebel, S; Gerlinger, K; Battistelli, R; Wittrock, S; Karaman, T; Schneider, M; Günther, CM; Engel, D; Will, I; Wintz, S; Weigand, M; Büttner, F; Höflich, K; Eisebitt, S; Pfau, B
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