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Yuheng Zeng

Chinese Academy of Sciences
H指数:26
被引数:2,479

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Nitrogen-Incorporated Silicon Dioxide Interlayer Enables Pinhole-Reduced and Robust TOPCon With a High Implied Open-Circuit Voltage over 760 mV

氮掺杂二氧化硅中间层实现了减少针孔且鲁棒的TOPCon,并具有超过760 mV的高隐含开路电压

2026-07-070
PRE
Nitrous Oxide-Plasma Silicon Oxide Coupled with Carbon-Incorporated Polycrystalline Silicon Enables Highly Passivated TOPCon Solar Cells

一氧化二氮-等离子体二氧化硅与碳掺杂多晶硅结合实现了高度钝化的TOPCon太阳能电池

2026-05-250
PRE
Carbon-incorporated polysilicon interconnection layer enables robust self-assembled monolayer anchoring for perovskite/TOPCon tandem solar cells

结合碳的多晶硅互连层为钙钛矿/TOPCon串联太阳能电池实现了强大的自组装单层锚定

2026-05-060
OAAI
Enhanced Passivation of Boron-Doped Polysilicon Passivated Contacts With a Single-Sided J0 of 2.8 fA/cm2 by Dual-Layer Silicon Oxide Structure

通过双层二氧化硅结构实现硼掺杂多晶硅钝化接触的单侧J0为2.8 fA/cm²的增强钝化

Small
IF12.1
2026-04-290
PRE
25.59%-efficient industrial-grade tunnel oxide passivating contact solar cells with carbon-incorporated polysilicon fabricated by tube PECVD

25.59%效率的工业级隧穿氧化物钝化接触太阳能电池,采用碳掺杂多晶硅并通过管式PECVD制备

2026-04-200
PRE
Enabling 748.6 mV Open-Circuit Voltage in Industrial Bifacial Tunnel Oxide Passivating Contact Solar Cells With Multi-Layer Polysilicon and Tailored Silver Paste

通过多层多晶硅和定制银浆在工业双面隧穿氧化物钝化接触太阳能电池中实现748.6 mV开路电压

2026-04-200
PRE
Addressing the Optical–Electrical Trade-Off via Rear Polished TOPCon Structures for Efficient Perovskite/Silicon Tandem Solar Cells

通过背面抛光TOPCon结构解决钙钛矿/硅串联太阳能电池的光电权衡问题

2026-03-240
PRE
Balancing optical and electrical properties by local polysilicon patterning and texturing for high-performance bifacial TOPCon cells and tandems

通过局部多晶硅图形化和纹理化平衡光学和电学性能,以实现高性能双面TOPCon电池和串联电池

2026-01-010
PRE
Enhanced passivation and contact properties of boron emitters through PECVD-deposited double boron silicate glass layers for high-efficiency tunnel oxide passivating contact solar cells

通过PECVD沉积的双层硼硅酸盐玻璃层改善硼发射极的钝化性能和接触特性,用于高效隧穿氧化层钝化接触太阳能电池

2025-05-010
PRE