In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III-V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/DopantsCRYSTAL GROWTH & DESIGNIF3.42024-04-012OAAI
24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy使用氢化物气相外延直接在生长平坦面上生长的24% 单结GaAs太阳能电池ADVANCED ENERGY MATERIALSIF262023-12-035OA
Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase EpitaxyACS OMEGAIF4.32023-11-151OAAI
GaAs solar cells grown on acoustically spalled GaAs substrates with 27% efficiencyJOULEIF35.42023-07-0117OAAI
Design of Planarizing Growth Conditions on Unpolished and Faceted (100)-Oriented GaAs Substrates Using Hydride Vapor Phase EpitaxyCRYSTAL GROWTH & DESIGNIF3.42023-01-237OA
High-Efficiency Solar Cells Grown on Spalled Germanium for Substrate Reuse without PolishingADVANCED ENERGY MATERIALSIF262022-06-1621OAAI
Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase EpitaxyCRYSTAL GROWTH & DESIGNIF3.42021-06-104PREAI
High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydridesAPPLIED PHYSICS LETTERSIF3.62018-01-2229OAAI
个人简介
教育背景
工作经历
荣誉奖项
未登录.png){kind=icon}
未登录个人简介教育背景工作经历荣誉奖项
研究方向