Joe Salfi - Publications, H-index & Citations

Joe Salfi

stewart blusson quantum matter institute

19H指数

66论文数

1.0K被引数

收录论文 28

发表时间

Robust microwave-optical photon conversion using cavity modes strongly hybridized with a color center ensemble 使用与色心集合强烈杂交的腔模式进行鲁棒的微波光子转换

npj Quantum Information

IF8.3

2025-06-16

OAAI

M. Khalifa; P. S. Kirwin; Jeff F. Young; J. Salfi

Cryogenic optical-to-microwave conversion using Si photonic integrated circuit Ge photodiodes 使用Si光子集成电路Ge光电二极管的低温光微波转换

APL PHOTONICS

IF5.3

2024-11-20

OAAI

Julien-Neitzert, D.; Leung, Edward K.; Islam, N.; Khorev, S.; Shekhar, S.; Chrostowski, L.; Young, Jeff F.; Salfi, J.

Kinetic inductance parametric converter

PHYSICAL REVIEW APPLIED

IF4.4

2024-08-08

OAAI

Khalifa, M.; Feldmann, P.; Salfi, J.

Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field

PHYSICAL REVIEW B

IF3.7

2023-12-04

OAAI

Sarkar, Abhikbrata; Wang, Zhanning; Rendell, Matthew; Hendrickx, Nico W.; Veldhorst, Menno; Scappucci, Giordano; Khalifa, Mohammad; Salfi, Joe; Saraiva, Andre; Dzurak, A. S.; Hamilton, A. R.; Culcer, Dimitrie

A solid-state quantum microscope for wavefunction control of an atom-based quantum dot device in silicon

NATURE ELECTRONICS

IF40.9

2023-06-26

PREAI

Voisin, B.; Salfi, J.; St Medar, D. D.; Johnson, B. C.; McCallum, J. C.; Simmons, M. Y.; Rogge, S.

Nonlinearity and Parametric Amplification of Superconducting Nanowire Resonators in Magnetic Field

PHYSICAL REVIEW APPLIED

IF4.4

2023-03-08

OAAI

Khalifa, M.; Salfi, J.

Valley population of donor states in highly strained silicon 高应变硅中供体状态的山谷人口

MATERIALS FOR QUANTUM TECHNOLOGY

IF3.6

2022-04-06

OAAI

Voisin, B.; Ng, K. S. H.; Salfi, J.; Usman, M.; Wong, J. C.; Tankasala, A.; Johnson, B. C.; McCallum, J. C.; Hutin, L.; Bertrand, B.; Vinet, M.; Valanoor, N.; Simmons, M. Y.; Rahman, R.; Hollenberg, L. C. L.; Rogge, S.

Hole spin echo envelope modulations

PHYSICAL REVIEW B

IF3.7

2019-09-03

OAAI

Philippopoulos, Pericles; Chesi, Stefano; Salfi, Joe; Rogge, Sven; Coish, W. A.

Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor

SCIENCE ADVANCES

IF12.5

2018-12-07

OAAI

van der Heijden, Joost; Kobayashi, Takashi; House, Matthew G.; Salfi, Joe; Barraud, Sylvain; Lavieville, Romain; Simmons, Michelle Y.; Rogge, Sven

Entanglement control and magic angles for acceptor qubits in Si

APPLIED PHYSICS LETTERS

IF3.6

2018-07-03

OAAI

Abadillo-Uriel, J. C.; Salfi, Joe; Hu, Xuedong; Rogge, Sven; Calderon, M. J.; Culcer, Dimitrie

Two-electron states of a group-V donor in silicon from atomistic full configuration interactions

PHYSICAL REVIEW B

IF3.7

2018-05-02

OAAI

Tankasala, Archana; Salfi, Joseph; Bocquel, Juanita; Voisin, Benoit; Usman, Muhammad; Klimeck, Gerhard; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.; Rogge, Sven; Rahman, Rajib

Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon

NANOSCALE

IF5.1

2017-01-01

OAAI

Usman, Muhammad; Voisin, Benoit; Salfi, Joe; Rogge, Sven; Hollenberg, Lloyd C. L.

Spatial metrology of dopants in silicon with exact lattice site precision

NATURE NANOTECHNOLOGY

IF34.9

2016-06-06

PREAI

Usman, M.; Bocquel, J.; Salfi, J.; Voisin, B.; Tankasala, A.; Rahman, R.; Simmons, M. Y.; Rogge, S.; Hollenberg, L. C. L.