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S

Siddharth Rajan

The Ohio State University

62H指数
382论文数
1.4W被引数
收录论文 117
发表时间
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Low Thermal Resistance Architectures for AlGaN-Based Semiconductor Devices低热阻结构设计用于AlGaN基半导体器件
errAdvanced Electronic Materials
IF5.3
err2026-09-13
err0
errOAAI
errKidus Guye; Davide Orlandini; Seungheon Shin; Andy Allerman; Damena Agonafer; Siddharth Rajan; Samuel Graham
err分享
err收藏
Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-03-01
err0
PREAI
errLi, Xuefeng; Pant, Nick; Rahman, Sheikh Ifatur; Armitage, Rob; Rajan, Siddharth; Kioupakis, Emmanouil; Feezell, Daniel
err分享
err收藏
Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-02-11
err1
PREAI
errZhu, Yinxuan; Allerman, Andrew A.; Joishi, Chandan; Pratt, Jonathan; Xavier, Agnes Maneesha Dominic Merwin; Ortiz, Gabriel Calderon; Klein, Brianna A.; Armstrong, Andrew; Hwang, Jinwoo; Rajan, Siddharth
err分享
err收藏
Progresses and Frontiers in Ultrawide Bandgap Semiconductors超宽禁带半导体领域的进展与前沿
errADVANCED ELECTRONIC MATERIALS
IF5.3
err2025-01-07
err0
errOAAI
errRajan, S; Li, XH
err分享
err收藏
Enhanced UV-Vis Rejection Ratio in Metal/BaTiO3/β-Ga2O3 Solar-Blind Photodetectors金属/BaTiO3/β-Ga2O3日盲区光电探测器的增强型UV-Vis拒斥比
errADVANCED ELECTRONIC MATERIALS
IF5.3
err2024-12-31
err2
errOAAI
errWriedt, N; Meng, LY; Yu, DS; Chae, C; Liddy, K; Dheenan, A; Dhara, S; Myers, RC; Maksimov, O; Blakeley, R; Krishna, S; Hwang, J; Zhao, HP; Mcglone, J; Rajan, S
err分享
err收藏
Editorial: Progresses and Frontiers in Ultrawide Bandgap Semiconductors
errADVANCED MATERIALS INTERFACES
IF4.4
err2024-12-23
err0
errOAAI
errLi, Xiaohang; Rajan, Siddharth
err分享
err收藏
Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni-Ga2O3 Schottky diodes
errAPL MATERIALS
IF4.5
err2024-10-24
err1
errOAAI
errRamdin, Daram N.; Huang, Hsien-Lien; Chae, Christopher; Dhara, Sushovan; Rajan, Siddharth; Hwang, Jinwoo; Brillson, Leonard J.
err分享
err收藏
Active interface characteristics of heterogeneously integrated GaAsSb/Si photodiodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-10-21
err0
errOAAI
errMuduli, Manisha; Xia, Yongkang; Lee, Seunghyun; Gajowski, Nathan; Chae, Chris; Rajan, Siddharth; Hwang, Jinwoo; Arafin, Shamsul; Krishna, Sanjay
err分享
err收藏
Synthesis and characteristics of a monocrystalline GaAs/ fl-Ga 2 O 3 p-n heterojunction
errAPPLIED SURFACE SCIENCE
IF6.9
err2024-08-01
err8
PREAI
errZhou, Jie; Gong, Jiarui; Sheikhi, Moheb; Dheenan, Ashok; Wang, Qingxiao; Abbasi, Haris; Liu, Yang; Adamo, Carolina; Marshall, Patrick; Wriedt, Nathan; Cheung, Clincy; Li, Yiran; Qiu, Shuoyang; Li, Xiaohang; Ng, Tien Khee; Gan, Qiaoqiang; Gambin, Vincent; Ooi, Boon S.; Rajan, Siddharth; Ma, Zhenqiang
err分享
err收藏
Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-05-30
err3
errOAAI
errRahman, Sheikh Ifatur; Awwad, Mohammad; Joishi, Chandan; Jamal-Eddine, Zane; Gunning, Brendan; Armstrong, Andrew; Rajan, Siddharth
err分享
err收藏
High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-05-15
err5
errOAAI
errNiroula, John; Xie, Qingyun; Rajput, Nitul S.; Darmawi-Iskandar, Patrick K.; Rahman, Sheikh Ifatur; Luo, Shisong; Palash, Rafid Hassan; Sikder, Bejoy; Yuan, Mengyang; Yadav, Pradyot; Micale, Gillian K.; Chowdhury, Nadim; Zhao, Yuji; Rajan, Siddharth; Palacios, Tomas
err分享
err收藏
Band alignment of grafted monocrystalline Si (001)/fl-Ga2O3 (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
errAPPLIED SURFACE SCIENCE
IF6.9
err2024-05-01
err9
PREAI
errGong, Jiarui; Zhou, Jie; Dheenan, Ashok; Sheikhi, Moheb; Alema, Fikadu; Ng, Tien Khee; Pasayat, Shubhra S.; Gan, Qiaoqiang; Osinsky, Andrei; Gambin, Vincent; Gupta, Chirag; Rajan, Siddharth; Ooi, Boon S.; Ma, Zhenqiang
err分享
err收藏
Al-Rich AlGaN Transistors with Regrown p-AlGaN Gate Layers and Ohmic Contacts具有再生长的p-algan栅极层和欧姆接触的富Al AlGaN晶体管
errADVANCED MATERIALS INTERFACES
IF4.4
err2024-03-29
err2
errOAAI
errKlein, Brianna; Allerman, Andrew; Armstrong, Andrew; Rosprim, Mary; Tyznik, Colin; Zhu, Yinxuan; Joishi, Chandan; Chae, Chris; Rajan, Siddharth
err分享
err收藏
Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2023-10-26
err2
errOAAI
errGhosh, Arnob; Xavier, Agnes Maneesha Dominic Merwin; Hasan, Syed M. N.; Rahman, Sheikh Ifatur; Blackston, Alex; Allerman, Andrew; Myers, Roberto C.; Rajan, Siddharth; Arafin, Shamsul
err分享
err收藏
Publisher's Note: β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-09-05
err0
PREAI
errDhara, Sushovan; Kalarickal, Nidhin Kurian; Dheenan, Ashok; Rahman, Sheikh Ifatur; Joishi, Chandan; Rajan, Siddharth
err分享
err收藏
Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β-Ga2O3
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-08-22
err3
errOAAI
errDhara, Sushovan; Dheenan, Ashok; Kalarickal, Nidhin Kurian; Huang, Hsien-Lien; Islam, Ahmad Ehteshamul; Joishi, Chandan; Fiedler, Andreas; McGlone, Joe F.; Ringel, Steven A.; Hwang, Jinwoo; Rajan, Siddharth
err分享
err收藏
β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-07-13
err15
errOAAI
errDhara, Sushovan; Kalarickal, Nidhin Kurian; Dheenan, Ashok; Rahman, Sheikh Ifatur; Joishi, Chandan; Rajan, Siddharth
err分享
err收藏
Anisotropic excitonic photocurrent in β-Ga2O3
errPHYSICAL REVIEW MATERIALS
IF3.4
err2023-06-23
err5
errOAAI
errVerma, Darpan; Adnan, Md Mohsinur Rahman; Dhara, Sushovan; Sturm, Chris; Rajan, Siddharth; Myers, Roberto C.
err分享
err收藏
Demonstration of self-aligned β-Ga2O3 δ-doped MOSFETs with current density >550 mA/mm
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-03-15
err6
errOAAI
errKalarickal, Nidhin Kurian; Dheenan, Ashok; McGlone, Joe. F. F.; Dhara, Sushovan; Brenner, Mark; Ringel, Steven. A. A.; Rajan, Siddharth
err分享
err收藏
Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-02-23
err2
PREAI
errXavier, Agnes Maneesha Dominic Merwin; Ghosh, Arnob; Rahman, Sheikh Ifatur; Allerman, Andrew; Arafin, Shamsul; Rajan, Siddharth
err分享
err收藏

研究方向

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