Ulrike Großner - Publications, H-index & Citations

Ulrike Großner

advanced power semiconductor laboratory

26H指数

252论文数

3.0K被引数

收录论文 44

发表时间

Control and tuning of color centers in 4H silicon carbide by application of electric field via Schottky diode 通过肖特基二极管施加电场对4H碳化硅中色心的控制与调谐

Materials Science in Semiconductor Processing

IF4.6

2025-10-01

OAAI

Erlend Lemva Ousdal; Marianne Etzelmüller Bathen; Helton Goncalves de Medeiros; Augustinas Galeckas; Piyush Kumar; Maria I.M. Martins; Alireza Farzad; Andrej Kuznetsov; Ulrike Grossner; Lasse Vines

S-PEEC-DI: Surface Partial Element Equivalent Circuit method with decoupling integrals (vol 173, 106152, 2025)S-PEEC-DI：带解耦积分的表面分段单元等效电路法（卷 173，106152，2025）

ENGINEERING ANALYSIS WITH BOUNDARY ELEMENTS

IF4.1

2025-06-01

OAAI

De Lauretis, Maria; Haller, Elena; Romano, Daniele; Antonini, Giulio; Ekman, Jonas; Kovacevic-Badstubner, Ivana; Grossner, Ulrike

Formation of extended defects in heavy-ion-degraded SiC power MOSFETs 重离子退化的SiC功率MOSFET中扩展缺陷的形成

APL MATERIALS

IF4.5

2025-05-02

OAAI

Martinella, Corinna; Bathen, Marianne Etzelmuller; Galeckas, Augustinas; Grossner, Ulrike

S-PEEC-DI: Surface Partial Element Equivalent Circuit method with decoupling integrals S-peec-di: 具有解耦积分的表面局部元素等效电路方法

ENGINEERING ANALYSIS WITH BOUNDARY ELEMENTS

IF4.1

2025-04-01

OAAI

De Lauretis, Maria; Haller, Elena; Romano, Daniele; Antonini, Giulio; Ekman, Jonas; Kovacevic-Badstubner, Ivana; Grossner, Ulrike

Aluminum in 4H-SiC above 10 MeV

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-01

OAAI

Belanche, Manuel; Yonezawa, Yoshiyuki; Heller, Rene; Mueller, Arnold; Vockenhuber, Christof; Martinella, Corinna; Rueb, Michael; Kato, Masashi; Murata, Koichi; Tsuchida, Hidekazu; Nakayama, Koji; Grossner, Ulrike

Dual configuration of shallow acceptor levels in 4H-SiC

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-07-01

OAAI

Bathen, Marianne Etzelmueller; Kumar, Piyush; Ghezellou, Misagh; Belanche, Manuel; Vines, Lasse; Ul-Hassan, Jawad; Grossner, Ulrike

Exploring the border traps near the valence band in the SiO2-SiC system using above-band-gap optical excitation

PHYSICAL REVIEW APPLIED

IF4.4

2024-06-27

OAAI

Kumar, P.; Medeiros, H. G.; Race, S.; Martins, M. I. M.; Ammann, P.; Bathen, M. E.; Prokscha, T.; Grossner, U.

Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-06-01

OAAI

Bathen, Marianne Etzelmuller; Karsthof, Robert; Galeckas, Augustinas; Kumar, Piyush; Kuznetsov, Andrej Yu.; Grossner, Ulrike; Vines, Lasse

Al-implantation induced damage in 4H-SiC

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-05-01

OAAI

Kumar, P.; Martins, M. I. M.; Bathen, M. E.; Prokscha, T.; Grossner, U.

Defect Profiling of Oxide-Semiconductor Interfaces Using Low-Energy Muons

ADVANCED MATERIALS INTERFACES

IF4.4

2023-06-23

OAAI

Martins, Maria Mendes; Kumar, Piyush; Woerle, Judith; Ni, Xiaojie; Grossner, Ulrike; Prokscha, Thomas

Investigation of the SiO2-SiC Interface Using Low-Energy Muon-Spin-Rotation Spectroscopy

PHYSICAL REVIEW APPLIED

IF4.4

2023-05-08

OAAI

Kumar, Piyush; Martins, Maria Ines Mendes; Bathen, Marianne Etzelmuller; Woerle, Judith; Prokscha, Thomas; Grossner, Ulrike

Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique

APPLIED PHYSICS LETTERS

IF3.6

2023-05-02

OAAI

Dorfer, Christian; Bathen, Marianne E.; Race, Salvatore; Kumar, Piyush; Tsibizov, Alexander; Woerle, Judith; Grossner, Ulrike

The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers

APL MATERIALS

IF4.5

2023-03-17

OAAI

Ghezellou, Misagh; Kumar, Piyush; Bathen, Marianne E. E.; Karsthof, Robert; Sveinbjornsson, Einar O.; Grossner, Ulrike; Bergman, J. Peder; Vines, Lasse; Ul-Hassan, Jawad

Gate Capacitance Characterization of Silicon Carbide and Silicon Power MOSFETs Revisited

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2022-09-01

OAAI

Stark, Roger; Tsibizov, Alexander; Kovacevic-Badstuebner, Ivana; Ziemann, Thomas; Grossner, Ulrike

Circuit-Based Electrothermal Modeling of SiC Power Modules With Nonlinear Thermal Models 具有非线性热模型的SiC功率模块的基于电路的电热建模

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2022-07-01

OAAI

Race, Salvatore; Philipp, Aron; Nagel, Michel; Ziemann, Thomas; Kovacevic-Badstuebner, Ivana; Grossner, Ulrike

On the rectangular mesh and the decomposition of a Green's-function-based quadruple integral into elementary integrals

ENGINEERING ANALYSIS WITH BOUNDARY ELEMENTS

IF4.1

2022-01-01

OAAI

De Lauretis, Maria; Haller, Elena; Di Murro, Francesca; Romano, Daniele; Antonini, Giulio; Ekman, Jonas; Kovacevic-Badstubner, Ivana; Grossner, Ulrike

Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching 快速开关下SiC功率mosfet三种端间电容模型的精度

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2021-08-01

OAAI

Stark, Roger; Tsibizov, Alexander; Nain, Neha; Grossner, Ulrike; Kovacevic-Badstuebner, Ivana

Designing cryo-enzymatic reactions in subzero liquid water by lipidic mesophase nanoconfinement

NATURE NANOTECHNOLOGY

IF34.9

2021-05-03

PREAI

Yao, Yang; Zhou, Tao; Farber, Raphael; Grossner, Ulrike; Floudas, George; Mezzenga, Raffaele

Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC

PHYSICAL REVIEW APPLIED

IF4.4

2020-11-20

OAAI

Woerle, J.; Bathen, M. E.; Prokscha, T.; Galeckas, A.; Ayedh, H. M.; Vines, L.; Grossner, U.

Accurate Temperature Estimation of SiC Power MOSFETs Under Extreme Operating Conditions

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2020-02-01

OAAI

Tsibizov, Alexander; Kovacevic-Badstuebner, Ivana; Kakarla, Bhagyalakshmi; Grossner, Ulrike

研究方向