未登录

E

Elad Koren

technion israel institute of technology

H指数:24

被引数:1,773

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Optically controlled synaptic device based on PdSe2 / α-In2Se3 vdW heterostructure FET

基于PdSe2 / α-In2Se3范德华异质结构FET的光控突触器件

IF0

2026-04-160

OA

High-pressure lattice dynamics study of few-layer α-In2Se3

高压下少层α-In2Se3的晶格动力学研究

Journal of Applied Physics

IF2.5

2026-02-140

PRE

Conformational bifurcation drives dual transport regimes in molecular junctions: Unsupervised machine learning insights

构象分叉驱动分子结中的双传输机制：无监督机器学习的见解

Smart Molecules

IF0

2026-01-011

OAAI

Mesoscale superlubric Brownian machine based on 2D graphitic interfaces

基于二维类石墨界面的介观超润滑布朗机器

MATERIALS HORIZONS

IF10.7

2025-01-010

OA

Direct Determination of Torsion in Twisted Graphite and MoS2 Interfaces

IF9.1

2024-07-111

OAAI

Langmuir-Blodgett organic films deposition for the formation of conformal 2D inorganic-organic heterostructures

APPLIED SURFACE SCIENCE

IF6.9

2024-05-013

PRE

Spreading resistance and conductance anisotropy in multilayer MoS2

APPLIED PHYSICS LETTERS

IF3.6

2024-03-253

OA

CP-AFM Molecular Tunnel Junctions with Alkyl Backbones Anchored Using Alkynyl and Thiol Groups: Microscopically Different Despite Phenomenological Similarity

IF3.9

2024-02-133

OAAI

Non-Volatile Reconfigurable p-n Junction Utilizing In-Plane Ferroelectricity in 2D WSe2/α-In2Se3 Asymmetric Heterostructures

在2D WSe2/α-In2Se3非对称异质结构中利用平面内铁电性的非易失性可重构p-n结

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-11-155

OAAI

Graphene-In2Se3 van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation

IF16

2023-11-0617

PRE

Spin-valley Rashba monolayer laser

NATURE MATERIALS

IF38.5

2023-07-0619

PRE

Edge-Based Two-Dimensional ?-In2Se3-MoS2 Ferroelectric Field Effect Device

基于边缘的二维？-In2Se3-MoS2铁电场效应器件

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-03-3114

PRE

Valley-addressable monolayer lasing through spin-controlled Berry phase photonic cavities

IF45.8

2023-01-010

PRE

Monolithic In2Se3-In2O3 heterojunction for multibit non-volatile memory and logic operations using optoelectronic inputs

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2022-05-269

OA

Edge State Quantum Interference in Twisted Graphitic Interfaces

ADVANCED SCIENCE

IF14.1

2022-03-132

OA

Bright excitonic multiplexing mediated by dark exciton transition in two-dimensional TMDCs at room temperature

MATERIALS HORIZONS

IF10.7

2022-01-017

PRE

Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

2D In2Se3中通过相互耦合的铁电性进行跨场光电调制

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2021-09-2423

OA

Modulating the Optoelectronic Properties of MoS2 by Highly Oriented Dipole-Generating Monolayers

通过高度定向的偶极生成单层来调制MoS2的光电特性

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-06-3014

PREAI

In Situ Observation of Low-Power Nano-Synaptic Response in Graphene Oxide Using Conductive Atomic Force Microscopy

使用导电原子力显微镜原位观察氧化石墨烯中的低功率纳米突触响应

IF12.1

2021-06-0326

PREAI

Dipole-Induced Raman Enhancement Using Noncovalent Azobenzene-Functionalized Self-Assembled Monolayers on Graphene Terraces

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-02-1611

PREAI