F. Hohls - Publications, H-index & Citations

F. Hohls

physikalisch-technische bundesanstalt (ptb)

26H指数

115论文数

2.4K被引数

收录论文 31

发表时间

Graphene quantum Hall resistance standard for realizing the unit of electrical resistance under relaxed experimental conditions

PHYSICAL REVIEW APPLIED

IF4.4

2025-01-13

PREAI

Yin, Yefei; Kruskopf, Mattias; Gournay, Pierre; Rolland, Benjamin; Goetz, Martin; Pesel, Eckart; Tschirner, Teresa; Momeni, Davood; Chatterjee, Atasi; Hohls, Frank; Pierz, Klaus; Scherer, Hansjoerg; Haug, Rolf J.; Schumacher, Hans Werner

Quantum Hall resistance standards based on epitaxial graphene with p-type conductivity

APPLIED PHYSICS LETTERS

IF3.6

2024-08-06

PREAI

Yin, Yefei; Kruskopf, Mattias; Bauer, Stephan; Tschirner, Teresa; Pierz, Klaus; Hohls, Frank; Haug, Rolf J.; Schumacher, Hans W.

Two electrons interacting at a mesoscopic beam splitter 介观分束器上的两个电子相互作用

NATURE NANOTECHNOLOGY

IF34.9

2023-05-11

OAAI

Ubbelohde, Niels; Freise, Lars; Pavlovska, Elina; Silvestrov, Peter G.; Recher, Patrik; Kokainis, Martins; Barinovs, Girts; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Kashcheyevs, Vyacheslavs

Controlling the error mechanism in a tunable-barrier nonadiabatic charge pump by dynamic gate compensation

PHYSICAL REVIEW B

IF3.7

2022-05-20

PREAI

Hohls, Frank; Kashcheyevs, Vyacheslavs; Stein, Friederike; Wenz, Tobias; Kaestner, Bernd; Schumacher, Hans W.

Non-adiabatic single-electron pumps in a dopant-free GaAs/AlGaAs 2DEG

APPLIED PHYSICS LETTERS

IF3.6

2021-09-13

OAAI

Buonacorsi, B.; Sfigakis, F.; Shetty, A.; Tam, M. C.; Kim, H. S.; Harrigan, S. R.; Hohls, F.; Reimer, M. E.; Wasilewski, Z. R.; Baugh, J.

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

SCIENTIFIC REPORTS

IF3.9

2019-07-16

OAAI

Fatahilah, Muhammad Fahlesa; Yu, Feng; Strempel, Klaas; Romer, Friedhard; Maradan, Dario; Meneghini, Matteo; Bakin, Andrey; Hohls, Frank; Schumacher, Hans Werner; Witzigmann, Bernd; Waag, Andreas; Wasisto, Hutomo Suryo

Quantum dot state initialization by control of tunneling rates

PHYSICAL REVIEW B

IF3.7

2019-05-20

OAAI

Wenz, Tobias; Klochan, Jevgeny; Hohls, Frank; Gerster, Thomas; Kashcheyevs, Vyacheslays; Schumacher, Hans W.

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-02-05

OAAI

Pakdehi, D. Momeni; Aprojanz, J.; Sinterhauf, A.; Pierz, K.; Kruskopf, M.; Willke, P.; Baringhaus, J.; Stoeckmann, J. P.; Traeger, G. A.; Hohls, F.; Tegenkamp, C.; Wenderoth, M.; Ahlers, F. J.; Schumacher, H. W.

Magnetocapacitance and dissipation factor of epitaxial graphene-based quantum Hall effect devices

PHYSICAL REVIEW B

IF3.7

2017-10-23

PREAI

Schurr, J.; Kalmbach, C. -C.; Ahlers, F. J.; Hohls, F.; Kruskopf, M.; Mueller, A.; Pierz, K.; Bergsten, T.; Haug, R. J.

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

PHYSICAL REVIEW B

IF3.7

2016-11-23

OAAI

Kalmbach, C. -C.; Ahlers, F. J.; Schurr, J.; Mueller, A.; Feilhauer, J.; Kruskopf, M.; Pierz, K.; Hohls, F.; Haug, R. J.

Dopant-controlled single-electron pumping through a metallic island

APPLIED PHYSICS LETTERS

IF3.6

2016-05-25

OAAI

Wenz, Tobias; Hohls, Frank; Jehl, Xavier; Sanquer, Marc; Barraud, Sylvain; Klochan, Jevgeny; Barinovs, Girts; Kashcheyevs, Vyacheslavs

Validation of a quantized-current source with 0.2ppm uncertainty

APPLIED PHYSICS LETTERS

IF3.6

2015-09-08

OAAI

Stein, Friederike; Drung, Dietmar; Fricke, Lukas; Scherer, Hansjoerg; Hohls, Frank; Leicht, Christoph; Goetz, Martin; Krause, Christian; Behr, Ralf; Pesel, Eckart; Pierz, Klaus; Siegner, Uwe; Ahlers, Franz J.; Schumacher, Hans W.

Partitioning of on-demand electron pairs

NATURE NANOTECHNOLOGY

IF34.9

2014-12-01

OAAI

Ubbelohde, Niels; Hohls, Frank; Kashcheyevs, Vyacheslavs; Wagner, Timo; Fricke, Lukas; Kaestner, Bernd; Pierz, Klaus; Schumacher, Hans W.; Haug, Rolf J.

Spin-dependent shot noise enhancement in a quantum dot

PHYSICAL REVIEW B

IF3.7

2013-07-15

OAAI

Ubbelohde, Niels; Fricke, Christian; Hohls, Frank; Haug, Rolf J.

Strong quantum memory at resonant Fermi edges revealed by shot noise

SCIENTIFIC REPORTS

IF3.9

2012-04-23

OAAI

Ubbelohde, N.; Roszak, K.; Hohls, F.; Maire, N.; Haug, R. J.; Novotny, T.

Measurement of finite-frequency current statistics in a single-electron transistor

NATURE COMMUNICATIONS

IF15.7

2012-01-03

134

OAAI

Ubbelohde, Niels; Fricke, Christian; Flindt, Christian; Hohls, Frank; Haug, Rolf J.

Quantized current source with mesoscopic feedback

PHYSICAL REVIEW B

IF3.7

2011-05-26

OAAI

Fricke, Lukas; Hohls, Frank; Ubbelohde, Niels; Kaestner, Bernd; Kashcheyevs, Vyacheslavs; Leicht, Christoph; Mirovsky, Philipp; Pierz, Klaus; Schumacher, Hans W.; Haug, Rolf J.

High-order cumulants in the counting statistics of asymmetric quantum dots 非对称量子点计数统计中的高阶累积量

APPLIED PHYSICS LETTERS

IF3.6

2010-05-18

OAAI

Fricke, Christian; Hohls, Frank; Sethubalasubramanian, Nandhavel; Fricke, Lukas; Haug, Rolf J.

Universal oscillations in counting statistics

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

IF9.1

2009-06-23

214

OAAI