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M

Martin Salinga

university of munster

32H指数
71论文数
5.7K被引数
收录论文 27
发表时间
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Conventional wisdom about threshold switches challenged关于阈值开关的传统智慧受到挑战
errNature Materials
IF38.5
err2026-03-17
err0
PREAI
errNils Holle; Martin Salinga
err分享
err收藏
A free energy landscape analysis of resistance fluctuations in a memristive device忆阻器件中电阻波动的自由能景观分析
errNature Materials
IF38.5
err2026-01-30
err0
errOAAI
errSebastian Walfort; Xuan Thang Vu; Jakob Ballmaier; Nils Holle; Niklas Vollmar; Martin Salinga
err分享
err收藏
The Photoinduced Response of Antimony from Femtoseconds to Minutes锑的光致响应：从飞秒到分钟
errADVANCED MATERIALS
IF0
err2025-01-13
err1
errOAAI
errWalfort, S; Holle, N; Vehndel, J; Yimam, DT; Vollmar, N; Kooi, BJ; Salinga, M
err分享
err收藏
Probabilistic photonic computing with chaotic light基于混沌光的概率光子计算
errNATURE COMMUNICATIONS
IF15.7
err2024-12-01
err0
errOAAI
errBrueckerhoff-Plueckelmann, Frank; Borras, Hendrik; Klein, Bernhard; Varri, Akhil; Becker, Marlon; Dijkstra, Jelle; Brueckerhoff, Martin; Wright, C. David; Salinga, Martin; Bhaskaran, Harish; Risse, Benjamin; Froening, Holger; Pernice, Wolfram
err分享
err收藏
Event-driven adaptive optical neural network
errSCIENCE ADVANCES
IF12.5
err2023-10-20
err11
errOAAI
errBrueckerhoff-Plueckelmann, Frank; Bente, Ivonne; Becker, Marlon; Vollmar, Niklas; Farmakidis, Nikolaos; Lomonte, Emma; Lenzini, Francesco; Wright, C. David; Bhaskaran, Harish; Salinga, Martin; Risse, Benjamin; Pernice, Wolfram H. P.
err分享
err收藏
Antimony as a Programmable Element in Integrated Nanophotonics锑作为集成纳米光子学中的可编程元素
errNANO LETTERS
IF9.1
err2022-04-22
err25
errOAAI
errAggarwal, Samarth; Milne, Tara; Farmakidis, Nikolaos; Feldmann, Johannes; Li, Xuan; Shu, Yu; Cheng, Zengguang; Salinga, Martin; Pernice, Wolfram H. P.; Bhaskaran, Harish
err分享
err收藏
Measurement of Onset of Structural Relaxation in Melt-Quenched Phase Change Materials测量熔融淬火相变材料中结构弛豫的开始
errADVANCED FUNCTIONAL MATERIALS
IF19
err2021-06-27
err8
errOAAI
errKersting, Benedikt; Sarwat, Syed Ghazi; Le Gallo, Manuel; Brew, Kevin; Walfort, Sebastian; Saulnier, Nicole; Salinga, Martin; Sebastian, Abu
err分享
err收藏
State dependence and temporal evolution of resistance in projected phase change memory投影相变存储器中电阻的状态依赖性和时间演化
errSCIENTIFIC REPORTS
IF3.9
err2020-05-19
err16
errOAAI
errKersting, Benedikt; Ovuka, Vladimir; Jonnalagadda, Vara Prasad; Sousa, Marilyne; Bragaglia, Valeria; Sarwat, Syed Ghazi; Le Gallo, Manuel; Salinga, Martin; Sebastian, Abu
err分享
err收藏
Localised states and their capture characteristics in amorphous phase-change materials
errSCIENTIFIC REPORTS
IF3.9
err2019-04-29
err3
errOAAI
errRuetten, Martin; Geilen, Andreas; Sebastian, Abu; Krebs, Daniel; Salinga, Martin
err分享
err收藏
Phase-change memories (PCM) - Experiments and modelling: general discussion
errFARADAY DISCUSSIONS
IF3.1
err2019-01-01
err8
PREAI
errBartlett, Philip; Berg, Alexandra I.; Bernasconi, Marco; Brown, Simon; Burr, Geoffrey; Foroutan-Nejad, Cina; Gale, Ella; Huang, Ruomeng; Ielmini, Daniele; Kissling, Gabriela; Kolosov, Vladimir; Kozicki, Michael; Nakamura, Hisao; Rushchanskii, Konstantin; Salinga, Martin; Shluger, Alexander; Thompson, Damien; Valov, Ilia; Wang, Wei; Waser, Rainer; Williams, R. Stanley
err分享
err收藏
Exploiting nanoscale effects in phase change memories
errFARADAY DISCUSSIONS
IF3.1
err2019-01-01
err16
errOAAI
errKersting, Benedikt; Salinga, Martin
err分享
err收藏
Monatomic phase change memory
errNATURE MATERIALS
IF38.5
err2018-06-18
err234
errOAAI
errSalinga, Martin; Kersting, Benedikt; Ronneberger, Ider; Jonnalagadda, Vara Prasad; Vu, Xuan Thang; Le Gallo, Manuel; Giannopoulos, Iason; Cojocaru-Miredin, Oana; Mazzarello, Riccardo; Sebastian, Abu
err分享
err收藏
Ion migration in crystalline and amorphous HfOx
errJOURNAL OF CHEMICAL PHYSICS
IF3.1
err2017-03-03
err49
PREAI
errSchie, Marcel; Mueller, Michael P.; Salinga, Martin; Waser, Rainer; De Souza, Roger A.
err分享
err收藏
Impact of defect occupation on conduction in amorphous Ge2Sb2Te5
errSCIENTIFIC REPORTS
IF3.9
err2016-08-16
err27
errOAAI
errKaes, Matthias; Salinga, Martin
err分享
err收藏
Relation between bandgap and resistance drift in amorphous phase change materials
errSCIENTIFIC REPORTS
IF3.9
err2015-12-01
err57
errOAAI
errRuetten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin
err分享
err收藏
Physics of the Switching Kinetics in Resistive Memories电阻式存储器中开关动力学的物理学
errADVANCED FUNCTIONAL MATERIALS
IF19
err2015-06-18
err242
PREAI
errMenzel, Stephan; Boettger, Ulrich; Wimmer, Martin; Salinga, Martin
err分享
err收藏
How fragility makes phase-change data storage robust: insights from ab initio simulations
errSCIENTIFIC REPORTS
IF3.9
err2014-10-06
err72
errOAAI
errZhang, Wei; Ronneberger, Ider; Zalden, Peter; Xu, Ming; Salinga, Martin; Wuttig, Matthias; Mazzarello, Riccardo
err分享
err收藏
Measurement of crystal growth velocity in a melt-quenched phase-change material熔体淬火相变材料中晶体生长速度的测量
errNATURE COMMUNICATIONS
IF15.7
err2013-08-29
err188
errOAAI
errSalinga, Martin; Carria, Egidio; Kaldenbach, Andreas; Bornhoefft, Manuel; Benke, Julia; Mayer, Joachim; Wuttig, Matthias
err分享
err收藏
Using Low-Loss Phase-Change Materials for Mid-Infrared Antenna Resonance Tuning
errNANO LETTERS
IF9.1
err2013-07-02
err274
PREAI
errMichel, Ann-Katrin U.; Chigrin, Dmitry N.; Mass, Tobias W. W.; Schoenauer, Kathrin; Salinga, Martin; Wuttig, Matthias; Taubner, Thomas
err分享
err收藏
Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materialsDoS变化对非晶相变材料电阻漂移和阈值切换的影响
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2012-09-01
err31
PREAI
errKrebs, Daniel; Schmidt, Ruediger M.; Klomfass, Josef; Luckas, Jennifer; Bruns, Gunnar; Schlockermann, Carl; Salinga, Martin; Carius, Reinhard; Wuttig, Matthias
err分享
err收藏

研究方向

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