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Saverio Ricci

Politecnico di Milano

H指数:10

被引数:838

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Neuromorphic hardware based on memristive nanodevices for seizure detection and recovery

基于忆阻纳米器件的神经形态硬件，用于癫痫发作检测与恢复

Neuromorphic Computing and Engineering

IF6.1

2026-02-110

OAAI

Volatile and Nonvolatile Dual‐Mode Switching Operations in an Ag‐Ag₂S Core‐Shell Nanoparticle Atomic Switch Network

Ag-ag <sub>2</sub>S核壳纳米粒子原子开关网络中的易失性和非易失性双模开关操作

Advanced Electronic Materials

IF5.3

2024-07-100

OAAI

Memristive tonotopic mapping with volatile resistive switching memory devices

NATURE COMMUNICATIONS

IF15.7

2024-04-015

OAAI

Tunable synaptic working memory with volatile memristive devices

NEUROMORPHIC COMPUTING AND ENGINEERING

IF6.1

2023-10-313

OA

Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering

用于神经形态工程的基于MoS2通道的带有电荷陷阱存储器的储层计算

ADVANCED MATERIALS

IF26.8

2022-11-1640

OAAI

A CMOS-memristor hybrid system for implementing stochastic binary spike timing-dependent plasticity

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES

IF3.7

2022-06-0611

OA

Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning

ADVANCED INTELLIGENT SYSTEMS

IF6.1

2022-05-1313

OA

In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks

在基于自组织纳米线网络的全忆阻体系结构的材料储层计算中

NATURE MATERIALS

IF38.5

2021-10-04250

OA

Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories

易失性电阻开关存储器的神经形态运动检测和方向选择性

ADVANCED INTELLIGENT SYSTEMS

IF6.1

2020-11-1650

OAAI

Changing the Electronic Polarizability of Monolayer MoS2by Perylene-Based Seeding Promoters

ADVANCED MATERIALS INTERFACES

IF4.4

2020-08-2313

OAAI