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Xi Zheng

School of Electronic Science and Engineering

H指数:16

被引数:834

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V-pit-induced electric field redistribution enabling efficient hole injection in InGaN-based red light-emitting diodes grown on silicon

V-pit诱导的电场重新分布使得在硅上生长的基于InGaN的红色发光二极管能够有效地注入空穴

IF19.1

2025-12-160

OAAI

Detection of defects in Micro-LED arrays by AOTF hyperspectral imaging and machine learning

利用AOTF高光谱成像和机器学习检测微LED阵列中的缺陷

OPTICS AND LASER TECHNOLOGY

IF5

2025-06-010

PRE

High Al content in n-AlGaInP window layer enhances the efficiency of red micro-LEDs

n-AlGaInP窗口层中高Al含量提高了红光微LED的效率

OPTICS AND LASER TECHNOLOGY

IF5

2025-05-140

PRE

Advances in Light-Emitting Diode-Based Transparent Displays

基于发光二极管的透明显示器的研究进展

ENERGY TECHNOLOGY

IF3.6

2025-02-090

PRE

Efficiency droop of AlGaN-based deep-ultraviolet miniaturized light-emitting diodes under electrical stress

APPLIED PHYSICS LETTERS

IF3.6

2024-12-020

PRE

Reduction in the Number of Quantum Wells Alleviates the Sidewall Effect in AlGaInP-Based Red Micro-LEDs

IF6.7

2024-11-111

PRE

Micro-LED optical properties distribution research based on AOTF hyperspectral imager using empirical cumulative function

OPTICS AND LASERS IN ENGINEERING

IF3.7

2024-10-010

PRE

UWB-Based AOA Indoor Position-Tracking System and Data Processing Algorithm

IEEE SENSORS JOURNAL

IF4.5

2024-10-013

PRE

Light Emission from the Sidewall Region Dominates the Spectral Broadening of InGaN-Based Red Micro-LEDs

IF6.7

2024-09-270

PRE

Limited impact of the sidewall effect in dependence of temperature for InGaN-based blue micro-LEDs grown on a silicon substrate

IF3.3

2024-08-221

PRE

Advancing Long-Wavelength InGaN Micro-LEDs as Wavelength-Selective Detectors for White-Light Communication

IF6.7

2024-07-251

PRE

Impact of Localization on the Optical Properties of InGaN-Based Red Light-Emitting Diodes Grown on a Silicon Substrate

IF6.7

2024-03-163

PRE

Spatially resolved current density distribution in GaN-based flip-chip green mini-LEDs by microscopic hyperspectral imaging and modified two-level modeling

IF3.3

2024-02-270

OA

Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate

APPLIED PHYSICS LETTERS

IF3.6

2024-01-2915

PRE

Enhanced light output power from AlGaN-based deep ultraviolet LEDs achieved by a four-in-one mesa structure

APPLIED PHYSICS LETTERS

IF3.6

2023-08-018

PRE

Study on the Carrier Lifetime of RGB Mini-Light-Emitting Diodes Based on Phase-Sensitive Detection

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT

IF5.9

2023-01-010

PRE

Exciton distribution-induced efficiency droop in green microscale light-emitting diodes at cryogenic temperatures

APPLIED PHYSICS LETTERS

IF3.6

2022-11-1711

PRE

Origin of the Inhomogeneous Electroluminescence of GaN-Based Green Mini-LEDs Unveiled by Microscopic Hyperspectral Imaging

IF6.7

2022-10-1814

PRE

Remarkable Black-Phase Robustness of CsPbI3 Nanocrystals Sealed in Solid SiO2/AlOx Sub-Micron Particles

密封在固体SiO2/AlOx亚微米颗粒中的CsPbI3纳米晶体的显着黑相鲁棒性

IF12.1

2021-10-1124

PREAI

Highly stable full-color display device with VLC application potential using semipolar μLEDs and all-inorganic encapsulated perovskite nanocrystal

PHOTONICS RESEARCH

IF7.2

2021-10-0626

PRE