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G

G. É. Cirlin

alferov university
H指数:39
被引数:5,982

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Designing the orientation of GaN nanowires on Si(100) through pore geometry engineering

通过孔道几何结构工程设计Si(100)上GaN纳米线的取向

2026-06-230
PRE
Topographically-guided van der Waals epitaxy: Selective growth of AlN nanowalls on h-BN step edges

拓扑引导的范德华外延:在h-BN台阶边缘选择生长AlN纳米墙

2025-11-260
PRE
MBE growth and properties of branched AlGaAs nanowires on silicon

MBE生长及硅衬底上分支AlGaAs纳米线的性质

2025-05-230
PRE
Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes
2021-09-2913
OAAI