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Sei‐Hyung Ryu

cree inc.

41H指数
259论文数
6.0K被引数
收录论文 8
发表时间
Performance of a 1-kV, Silicon Carbide Avalanche Breakdown Diode
err2015-09-01
err14
PREAI
errUrciuoli, D.; Ryu, S.; Capell, D. C.; Ibitayo, D.; Koebke, G.; Tipton, C. W.
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A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
err2014-02-01
err50
PREAI
errEricson, Nance; Frank, Shane; Britton, Chuck; Marlino, Laura; Ryu, Sei-Hyung; Grider, Dave; Mantooth, Alan; Francis, Matt; Lamichhane, Ranjan; Mudholkar, Mihir; Shepherd, Paul; Glover, Michael; Valle-Mayorga, Javier; McNutt, Ty; Barkley, Adam; Whitaker, Bret; Cole, Zach; Passmore, Brandon; Lostetter, Alex
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Atomic-scale origins of bias-temperature instabilities in SiC-SiO2 structures
err2011-02-11
err31
PREAI
errShen, Xiao; Zhang, En Xia; Zhang, Cher Xuan; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Dhar, Sarit; Ryu, Sei-Hyung; Pantelides, Sokrates T.
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SiC Power Devices for Microgrids
err2010-12-01
err150
PREAI
errZhang, Qingchun (Jon); Callanan, Robert; Das, M. K.; Ryu, Sei-Hyung; Agarwal, Anant K.; Palmour, John W.
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High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric
err2009-10-16
err45
PREAI
errLichtenwalner, Daniel J.; Misra, Veena; Dhar, Sarit; Ryu, Sei-Hyung; Agarwal, Anant
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Relationship between 4H-SiC/SiO2 transition layer thickness and mobility
err2009-07-20
err92
PREAI
errBiggerstaff, T. L.; Reynolds, C. L., Jr.; Zheleva, T.; Lelis, A.; Habersat, D.; Haney, S.; Ryu, S. -H.; Agarwal, A.; Duscher, G.
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Silicon carbide power MOSFET model and parameter extraction sequence
err2007-03-01
err216
PREAI
errMcNutt, Ty R.; Hefner, Allen R.; Mantooth, H. Alan; Berning, David; Ryu, Sei-Hyung
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Low-dose n-type nitrogen implants in 4H-SiC
err2002-12-23
err18
PREAI
errSaks, NS; Ryu, SH; Suvorov, AV
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