Yao‐Feng Chang - Publications, H-index & Citations

Yao‐Feng Chang

beijing institute of technology

36H指数

171论文数

4.3K被引数

收录论文 49

发表时间

Highly Graphitized Straw-Derived Carbon via Molten Salt Electrolysis for Potassium-Ion Batteries 通过熔盐电解法制备的石墨化程度高的秸秆衍生碳用于钾离子电池

Materials

IF3.2

2026-03-03

OAAI

Yao Chang; Xinrui Wang; Yi Lu; Shijie Li; Zhenghao Pu; Wei-Li Song; Dongbai Sun

Memristor Synapse—A Device-Level Critical Review 忆阻器突触-设备级关键评论

Nanomaterials

IF4.3

2026-01-29

OAAI

Sridhar Chandrasekaran; Yao-Feng Chang; Firman Mangasa Simanjuntak

CMOS-Compatible HfOx-Based Radiation Hardening Component for Neuromorphic Computing Applications CMOS兼容的HfOx基抗辐照器件，用于神经形态计算应用

ADVANCED ELECTRONIC MATERIALS

IF5.3

2025-01-01

PREAI

Chang, YF; Huang, YF; Chung, CH; Chen, YC

Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems 用于神经形态和储层计算系统的MoS2-Based原子电阻器中的可编程保留特性

ACS NANO

IF16

2024-05-20

PREAI

Lee, Yoonseok; Huang, Yifu; Chang, Yao-Feng; Yang, Sung Jin; Ignacio, Nicholas D.; Kutagulla, Shanmukh; Mohan, Sivasakthya; Kim, Sunghun; Lee, Jungwoo; Akinwande, Deji; Kim, Sungjun

Editorial: Emerging memories, circuits, and systems for post-Moore computing applications in nanotechnology

FRONTIERS IN NANOTECHNOLOGY

IF3.8

2023-07-10

OAAI

Chen, Ying-Chen; Amirsoleimani, Amirali; Chang, Yao-Feng

Structure Design and Characterization of 3D Printing System of Thermal Battery Electrode Ink Film

MICROMACHINES

IF3

2023-05-29

OAAI

Liu, Fengli; Lu, Jiale; Hao, Yongping; Chang, Yao; Yu, Kuaikuai; Liu, Shuangjie; Chu, Zhiwei

Reliability Improvement and Effective Switching Layer Model of Thin-Film MoS2 Memristors 薄膜MoS2忆阻器的可靠性改进和有效开关层模型

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-04-13

OAAI

Huang, Yifu; Gu, Yuqian; Mohan, Sivasakthya; Dolocan, Andrei D.; Ignacio, Nicholas; Kutagulla, Shanmukh; Matthews, Kevin; Londono-Calderon, Alejandra; Chang, Yao-Feng; Chen, Ying-Chen H.; Warner, Jamie T.; Pettes, Michael C.; Lee, Jack; Akinwande, Deji

Editorial for the Special Issue on the Progress of Emerging Hardware Development for Post-Moore's Computing

MICROMACHINES

IF3

2023-01-12

OAAI

Chang, Yao-Feng

ReSe2-Based RRAM and Circuit-Level Model for Neuromorphic Computing 神经形态计算的ReSe2-Based RRAM和电路级模型

FRONTIERS IN NANOTECHNOLOGY

IF3.8

2021-11-19

OAAI

Huang, Yifu; Gu, Yuqian; Wu, Xiaohan; Ge, Ruijing; Chang, Yao-Feng; Wang, Xiyu; Zhang, Jiahan; Akinwande, Deji; Lee, Jack C.

Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions

MICROMACHINES

IF3

2021-01-03

OAAI

Chen, Ying-Chen; Lin, Chao-Cheng; Chang, Yao-Feng

Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-08-04

PREAI

Cho, Hyojong; Ryu, Ji-Ho; Mahata, Chandreswar; Ismail, Muhammad; Chen, Ying-Chen; Chang, Yao-Feng; Cho, Seongjae; Mikhaylov, Alexey; Lee, Jack C.; Kim, Sungjun

A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices

MATERIALS TODAY PHYSICS

IF9.7

2020-06-01

PREAI

Lin, C. -Y.; Chen, P. -H.; Chang, T. -C.; Huang, W. -C.; Tan, Y. -F.; Lin, Y. -H.; Chen, W. -C.; Lin, C. -C.; Chang, Y. -F.; Chen, Y. -C.; Huang, H. -C.; Ma, X. -H.; Hao, Y.; Sze, S. M.

SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition

APPLIED PHYSICS LETTERS

IF3.6

2020-05-26

PREAI

Hsu, Yu-Lin; Chang, Yao-Feng; Chung, Wei-Min; Chen, Ying-Chen; Lin, Chao-Cheng; Leu, Jihperng

Complementary Metal-Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing 用于神经形态计算的互补金属氧化物半导体和忆阻硬件

ADVANCED INTELLIGENT SYSTEMS

IF6.1

2020-04-14

112

OAAI

Azghadi, Mostafa Rahimi; Chen, Ying-Chen; Eshraghian, Jason K.; Chen, Jia; Lin, Chih-Yang; Amirsoleimani, Amirali; Mehonic, Adnan; Kenyon, Anthony J.; Fowler, Burt; Lee, Jack C.; Chang, Yao-Feng

Compliance current and temperature effects on non-volatile memory switching and volatile switching dynamics in a Cu/SiOx/p++-Si device

APPLIED PHYSICS LETTERS

IF3.6

2019-11-19

PREAI

Yoon, Sung Joon; Ryu, Ji-Ho; Ismail, Muhammad; Chen, Ying-Chen; Chang, Yao-Feng; Yun, Min Ju; Kim, Hee-Dong; Kim, Sungjun

Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

NANOSCALE

IF5.1

2019-01-01

101

PREAI

Kim, Sungjun; Chen, Jia; Chen, Ying-Chen; Kim, Min-Hwi; Kim, Hyungjin; Kwon, Min-Woo; Hwang, Sungmin; Ismail, Muhammad; Li, Yi; Miao, Xiang-Shui; Chang, Yao-Feng; Park, Byung-Gook

Dual Functions of V/SiOx/AlOy/p++ Si Device as Selector and Memory

NANOSCALE RESEARCH LETTERS

IF4.1

2018-08-23

OAAI

Kim, Sungjun; Lin, Chih-Yang; Kim, Min-Hwi; Kim, Tae-Hyeon; Kim, Hyungjin; Chen, Ying-Chen; Chang, Yao-Feng; Park, Byung-Gook

Selector-less Graphite Memristor: Intrinsic Nonlinear Behavior with Gap Design Method for Array Applications

ENGINEERING CARBON HYBRIDS - CARBON ELECTRONICS 3

IF0

2018-05-04

PREAI

Chen, Ying-Chen; Chang, Yao-Feng; Lee, Jack C.

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application (vol 51, 055108, 2018)

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-04-20

PREAI

Chen, Ying-Chen; Lin, Chih-Yang; Huang, Hui-Chun; Kim, Sungjun; Fowler, Burt; Chang, Yao-Feng; Wu, Xiaohan; Xu, Gaobo; Chang, Ting-Chang; Lee, Jack C.

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

SMALL

IF12.1

2018-04-17

PREAI

Kim, Sungjun; Jung, Sunghun; Kim, Min-Hwi; Chen, Ying-Chen; Chang, Yao-Feng; Ryoo, Kyung-Chang; Cho, Seongjae; Lee, Jong-Ho; Park, Byung-Gook

研究方向