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K

Kar Seng Teng

Swansea University

H指数:29

被引数:5,831

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Ultra-low dark current self-powered 0.36–1.7 μm broadband photodetector with tungsten oxide as interface modification layer

Optical Materials

IF4.2

2026-01-140

PRE

Broadband photodetector based on NiO/TiO 2 /n-Si heterojunction

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2024-06-010

PRE

High-performance self-powered ultraviolet photodetector based on PVK/amorphous-WO3 organic-inorganic heterojunction

APPLIED SURFACE SCIENCE

IF6.9

2024-01-0118

OAAI

Extended wavelength and enhanced sensitivity of PbS colloidal quantum dots/Bi2Te3 photodetector by band alignment engineering

通过带对准工程扩展PbS胶体量子点/Bi2Te3光电探测器的波长和增强的灵敏度

MATERIALS & DESIGN

IF7.9

2023-05-014

OAAI

Room Temperature Broadband Bi2Te3/PbS Colloidal Quantum Dots Infrared Photodetectors

室温宽带Bi2Te3/PbS胶体量子点红外光电探测器

IF3.5

2023-04-275

OAAI

High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector

IF3.5

2023-03-0213

OAAI

High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures

IF3.5

2023-02-174

OAAI

Reusing Waste Coffee Grounds as Electrode Materials: Recent Advances and Future Opportunities

GLOBAL CHALLENGES

IF6.4

2022-10-219

OAAI

Fast-Response Photodetector Based on Hybrid Bi2Te3/PbS Colloidal Quantum Dots

基于Bi2Te3/PbS混合胶体量子点的快速响应光电探测器

IF4.3

2022-09-162

OA

Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current

IF3.3

2022-04-206

OA

Liquid-phase catalytic growth of graphene

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-013

OA

Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-0123

OA

Vertically Aligned Graphene Prepared by Photonic Annealing for Ultrasensitive Biosensors

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-07-1329

OAAI

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

基于p-gete/n-si异质结的红外光伏探测器

NANOSCALE RESEARCH LETTERS

IF4.1

2020-06-2915

OAAI

High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

基于NiO/β-Ga2O3异质结的高性能深紫外光电探测器

NANOSCALE RESEARCH LETTERS

IF4.1

2020-02-2271

OAAI

Infrared photodetector based on GeTe nanofilms with high performance

IF3.3

2020-02-1918

OA

Tantalum disulfide quantum dots: preparation, structure, and properties

NANOSCALE RESEARCH LETTERS

IF4.1

2020-01-2823

OAAI

In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application

NANOSCALE RESEARCH LETTERS

IF4.1

2019-05-1422

OAAI

Recent Advances in Graphene Homogeneous p-n Junction for Optoelectronics

光电子用石墨烯同质p-n结的研究进展

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2019-04-1223

OAAI

Graphene quantum dots from chemistry to applications

石墨烯量子点从化学到应用

MATERIALS TODAY CHEMISTRY

IF6.7

2018-12-01548

OAAI