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S. L. Rumyantsev

university system of georgia

32H指数
179论文数
4.8K被引数
收录论文 23
发表时间
AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches
err2023-01-01
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errOAAI
errBajurko, Pawel; Sobolewski, Jakub; Yashchyshyn, Yevhen; Sai, Pavlo; Rumyantsev, Sergey L.; Narytnyk, Teodor; Cywinski, Grzegorz
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The discrete noise of magnons
err2019-03-04
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errOAAI
errRumyantsev, S.; Balinskiy, M.; Kargar, F.; Khitun, A.; Balandin, A. A.
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Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices
err2019-01-01
err35
errOAAI
errGeremew, A. K.; Kargar, F.; Zhang, E. X.; Zhao, S. E.; Aytan, E.; Bloodgood, M. A.; Salguero, T. T.; Rumyantsev, S.; Fedoseyev, A.; Fleetwood, D. M.; Balandin, A. A.
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Low-frequency electronic noise in superlattice and random-packed thin films of colloidal quantum dots
err2019-01-01
err16
errOAAI
errGeremew, Adane; Qian, Caroline; Abelson, Alex; Rumyantsev, Sergey; Kargar, Fariborz; Law, Matt; Balandin, Alexander A.
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Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications
err2018-03-27
err16
errOAAI
errCywinski, G.; Yahniuk, I.; Kruszewski, P.; Grabowski, M.; Nowakowski-Szkudlarek, K.; Prystawko, P.; Sai, P.; Knap, W.; Simin, G. S.; Rumyantsev, S. L.
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Terahertz Beam Testing of Millimeter Wave Monolithic Integrated Circuits
err2017-09-01
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errOAAI
errRumyantsev, Sergey L.; Muraviev, Andrey; Rudin, Sergey; Rupper, Greg; Reed, Meredith; Suarez, John; Shur, Michael
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Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes
err2017-03-28
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PREAI
errKozlovski, V. V.; Lebedev, A. A.; Levinshtein, M. E.; Rumyantsev, S. L.; Palmour, J. W.
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Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes
err2017-02-24
err27
PREAI
errKozlovski, V. V.; Lebedev, A. A.; Levinshtein, M. E. M. M. M. M. M.; Rumyantsev, S. L.; Palmour, J. W.
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Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes
err2016-07-18
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PREAI
errCywinski, G.; Szkudlarek, K.; Kruszewski, P.; Yahniuk, I.; Yatsunenko, S.; Muziol, G.; Skierbiszewski, C.; Knap, W.; Rumyantsev, S. L.
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Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications
err2016-01-01
err102
PREAI
errStolyarov, Maxim A.; Liu, Guanxiong; Bloodgood, Matthew A.; Aytan, Ece; Jiang, Chenglong; Samnakay, Rameez; Salguero, Tina T.; Nika, Denis L.; Rumyantsev, Sergey L.; Shur, Michael S.; Bozhilov, Krassimir N.; Balandin, Alexander A.
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Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors
err2015-07-14
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errOAAI
errStolyarov, Maxim A.; Liu, Guanxiong; Rumyantsev, Sergey L.; Shur, Michael; Balandin, Alexander A.
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Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices
err2015-01-13
err124
errOAAI
errSamnakay, R.; Jiang, C.; Rumyantsev, S. L.; Shur, M. S.; Balandin, A. A.
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Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts
err2014-04-14
err123
errOAAI
errRenteria, J.; Samnakay, R.; Rumyantsev, S. L.; Jiang, C.; Goli, P.; Shur, M. S.; Balandin, A. A.
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Plasmonic and bolometric terahertz detection by graphene field-effect transistor
err2013-10-28
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errOAAI
errMuraviev, A. V.; Rumyantsev, S. L.; Liu, G.; Balandin, A. A.; Knap, W.; Shur, M. S.
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The effect of a transverse magnetic field on 1/f noise in graphene
err2013-10-25
err22
PREAI
errRumyantsev, S. L.; Coquillat, D.; Ribeiro, R.; Goiran, M.; Knap, W.; Shur, M. S.; Balandin, A. A.; Levinshtein, M. E.
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Localized and collective magnetoplasmon excitations in AlGaN/GaN-based grating-gate terahertz modulators
err2011-11-21
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PREAI
errNogajewski, K.; Lusakowski, J.; Knap, W.; Popov, V. V.; Teppe, F.; Rumyantsev, S. L.; Shur, M. S.
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Low-Frequency Current Fluctuations in Graphene-like Exfoliated Thin-Films of Bismuth Selenide Topological Insulators硒化铋拓扑绝缘体的类石墨烯剥离薄膜中的低频电流波动
err2011-03-23
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PREAI
errHossain, Md Zahid; Rumyantsev, Sergey L.; Shahil, Khan M. F.; Teweldebrhan, Desalegne; Shur, Michael; Balandin, Alexander A.
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Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors
err2001-08-06
err68
PREAI
errRumyantsev, SL; Pala, N; Shur, MS; Gaska, R; Levinshtein, ME; Adivarahan, V; Yang, J; Simin, G; Asif Khan, M
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Low-frequency noise in cadmium-selenide thin-film transistors
err2000-10-02
err23
PREAI
errDeen, MJ; Rumyantsev, SL; Landheer, D; Xu, DX
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AlGaN/GaN high electron mobility field effect transistors with low 1/f noise
err1998-08-24
err104
PREAI
errLevinshtein, ME; Rumyantsev, SL; Gaska, R; Yang, JW; Shur, MS
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