未登录 Over 20 % improvement of current-gain cut off frequency 0.3 μm AlGaN/GaN HEMTs with ultra-low Von Schottky Drain for broadband application 超过20%的电流增益截止频率改善:具有超低Von Schottky漏极的0.3 μm AlGaN/GaN HEMTs,适用于宽带应用 Lin, Zhe; Ding, Jihong; He, Hanzhao; Liu, Dongsheng; Huang, Wei; Li, Liang; Zhang, D. W.; Yu, Hao; Song, Xubo; Lv, Yuanjie; Feng, Zhihong; Fang, Baitong; Zhang, Kai; Zhang, Debin 分享 收藏
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A Facile and Rapid Approach to Lotus-Seedpod-Structured Electronic Skin for Monitoring Diverse Physical Stimuli Huang, Yanhao; Chen, Libo; Zheng, Shaodi; Wu, Xiaotian; Liu, Lei; Zhang, Kai; Ke, Kai; Liu, Zhengying; Yang, Wei; Yang, Mingbo 分享 收藏
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Impact of Electrostatic Interactions on the Self-Assembly of Charge-Neutral Block Copolyelectrolytes Russell, Sebastian T.; Raghunathan, Ramya; Jimenez, Andrew M.; Zhang, Kai; Brucks, Spencer D.; Iacob, Ciprian; West, Alan C.; Gang, Oleg; Campos, Luis M.; Kumar, Sanat K. 分享 收藏
Polymer-Grafted Nanoparticle Membranes with Controllable Free Volume Bilchak, Connor R.; Buenning, Eileen; Asai, Makoto; Zhang, Kai; Duming, Christopher J.; Kumar, Sanat K.; Huang, Yucheng; Benicewicz, Brian C.; Gidley, David W.; Cheng, Shiwang; Sokolov, Alexei P.; Minelli, Matteo; Doghieri, Ferruccio 分享 收藏
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