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收藏Oxygen-pressure driven balancing of interface and bulk scattering in amorphous oxide semiconductor thin-film transistors氧气压力驱动的界面与体散射在非晶氧化物半导体薄膜晶体管中的平衡
Lin, Che-Yi; Kuo, Yu-Ching; Liu, I. -Chen; Yang, Feng-Shou; Chang, Yuan-Ming; Chiu, Po-Wen; Nabatame, Toshihide; Li, Mengjiao; Tsukagoshi, Kazuhito; Lin, Yen-Fu
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收藏Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis使用同步加速器x射线分析HfxZr1-xO2薄膜的铁电性和铁电正交相之间的相关性
Onaya, Takashi; Nabatame, Toshihide; Jung, Yong Chan; Hernandez-Arriaga, Heber; Mohan, Jaidah; Kim, Harrison Sejoon; Sawamoto, Naomi; Nam, Chang-Yong; Tsai, Esther H. R.; Nagata, Takahiro; Kim, Jiyoung; Ogura, Atsushi
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收藏Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1-xO2/ZrO2 bilayer by atomic layer deposition
Onaya, Takashi; Nabatame, Toshihide; Inoue, Mari; Jung, Yong Chan; Hernandez-Arriaga, Heber; Mohan, Jaidah; Kim, Harrison Sejoon; Sawamoto, Naomi; Nagata, Takahiro; Kim, Jiyoung; Ogura, Atsushi
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收藏MEMS-Based Wavelength-Selective Bolometers
Thang Duy Dao; Anh Tung Doan; Ishii, Satoshi; Yokoyama, Takahiro; Orjan, Handegard Sele; Dang Hai Ngo; Ohki, Tomoko; Ohi, Akihiko; Wada, Yoshiki; Niikura, Chisato; Miyajima, Shinsuke; Nabatame, Toshihide; Nagao, Tadaaki
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收藏Memristive characteristic of an amorphous Ga-Sn-O thin-film device
Sugisaki, Sumio; Matsuda, Tokiyoshi; Uenuma, Mutsunori; Nabatame, Toshihide; Nakashima, Yasuhiko; Imai, Takahito; Magari, Yusaku; Koretomo, Daichi; Furuta, Mamoru; Kimura, Mutsumi
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收藏Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates自支撑GaN衬底上Mg注入和Mg掺杂GaN层中缺陷的比较分析
Kumar, Ashutosh; Mitsuishi, Kazutaka; Hara, Toru; Kimoto, Koji; Irokawa, Yoshihiro; Nabatame, Toshihide; Takashima, Shinya; Ueno, Katsunori; Edo, Masaharu; Koide, Yasuo
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