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D

Dheemahi Rao

jawaharlal nehru centre for advanced scientific research

H指数:12

被引数:457

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Heavily doped; highly compensated epitaxial ScN thin films exceed Boltzmann thermopower limits

高掺杂；高补偿的异质外延ScN薄膜超过玻尔兹曼热电势极限

IF45.8

2026-08-060

PRE

Electron-Doped Semiconducting Rocksalt AlxSc1–xN: An Emerging Transparent Conducting Nitride

电子掺杂半导体岩盐结构AlxSc1–xN: 一种新兴的透明导电氮化物

Chemistry of Materials

IF7

2025-12-250

PRE

Vacancy-Ordered Hybrid Two-Dimensional Bi(III) Iodides with (100)-Oriented Dion-Jacobson Perovskite-Related Structures

空位有序的杂化二维Bi(III)碘化物，具有(100)取向的与Dion-Jacobson相关钙钛矿结构

INORGANIC CHEMISTRY

IF4.7

2025-05-120

PRE

Optical manipulation of localized electron transport in disordered chromium nitride

PHYSICAL REVIEW B

IF3.7

2025-02-100

PRE

Thermionic Emission in Artificially Structured Single-Crystalline Elemental Metal/Compound Semiconductor Superlattices

ADVANCED MATERIALS

IF26.8

2024-12-020

OA

Electron confinement-induced plasmonic breakdown in metals

金属中的电子限制引起的等离子体击穿

SCIENCE ADVANCES

IF12.5

2024-11-220

OA

Flexible Near-Infrared Plasmon-Polaritons in Epitaxial Scandium Nitride Enabled by van der Waals Heteroepitaxy

IF9.1

2024-10-290

PRE

Dominant Scattering Mechanisms in Limiting the Electron Mobility of Scandium Nitride

限制氮化scan电子迁移率的主要散射机制

IF9.1

2024-09-060

PRE

Quasiclassical Anderson transition and thermally activated percolative charge transport in single-crystalline ScN

PHYSICAL REVIEW B

IF3.7

2024-04-252

PRE

Reversal of Band-Ordering Leads to High Hole Mobility in Strained p-type Scandium Nitride

IF9.1

2023-08-297

PRE

Demonstration of compensated n-type scandium nitride Schottky diodes

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-01-312

PRE

A photonic artificial synapse with a reversible multifaceted photochromic compound

NANOSCALE HORIZONS

IF6.6

2023-01-0114

PRE

Polar Semiconducting Scandium Nitride as an Infrared Plasmon and Phonon-Polaritonic Material

IF9.1

2022-06-1718

PRE

Multifunctional Irradiation-Induced Defects for Enhancing Thermoelectric Properties of Scandium Nitride Thin Films

ACS APPLIED ENERGY MATERIALS

IF5.5

2022-05-2015

PRE

Detailed study of reactively sputtered ScN thin films at room temperature

IF2.9

2022-05-0111

PRE

In-plane Cr2N-CrN metal-semiconductor heterostructure with improved thermoelectric properties

PHYSICAL REVIEW MATERIALS

IF3.4

2021-11-2215

PRE

Reducing high carrier concentration in rocksalt-AlxSc1-xN with Mg acceptor doping

APPLIED PHYSICS LETTERS

IF3.6

2021-05-202

PREAI

Giant enhancement of plasmonic response and epsilon-near-zero signature in refractory transition metals (Ta, W, and Mo) deposited at high-temperature

APPLIED PHYSICS LETTERS

IF3.6

2021-01-286

PREAI

Effects of adatom mobility and Ehrlich-Schwoebel barrier on heteroepitaxial growth of scandium nitride (ScN) thin films

APPLIED PHYSICS LETTERS

IF3.6

2020-11-2322

PREAI

High mobility and high thermoelectric power factor in epitaxial ScN thin films deposited with plasma-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2020-04-1437

OAAI