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Chang Yong Han

kyung hee university

14H指数
62论文数
673被引数
收录论文 4
发表时间
Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit
err2024-05-01
err6
PREAI
errKim, Yeon Ho; Jiang, Wei; Lee, Donghun; Moon, Donghoon; Choi, Hyun-Young; Shin, June-Chul; Jeong, Yeonsu; Kim, Jong Chan; Lee, Jaeho; Huh, Woong; Han, Chang Yong; So, Jae-Pil; Kim, Tae Soo; Kim, Seong Been; Koo, Hyun Cheol; Wang, Gunuk; Kang, Kibum; Park, Hong-Gyu; Jeong, Hu Young; Im, Seongil; Lee, Gwan-Hyoung; Low, Tony; Lee, Chul-Ho
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