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Hyunho Seok

massachusetts institute of technology

18H指数
88论文数
1.1K被引数
收录论文 36
发表时间
Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing铁电-离子混合忆阻器硬件用于高可扩展性存内计算
err2026-05-21
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errJeong-Han Kim; Wonjun Shin; Ryun-Han Koo; Jangsaeng Kim; Eugene Park; Piush Behera; Sojin Kim; Jinseok Hong; Feras Al-Dirini; Been Kwak; Jiwon You; Jiseong Im; Dooyong Koh; Yejin Hong; Qinyuan Xue; Hyun-Min Kim; Hyunho Seok; Youngchan Cho; Hwiin Ju; Wooje Jung; Kyunghwan Lee; Daewon Ha; Jong-Ho Lee; Seung-Yong Lee; Deok-Hwang Kwon; Frances M. Ross; Youngho Kang; Suraj S. Cheema; Daewoong Kwon
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Heterogeneous 3D Integration Based on Atomic-Level Electronics基于原子级电子学的异构三维集成
err2026-04-07
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PREAI
errHyunho Seok; Sihoon Son; Hyunbin Choi; Jinhyoung Lee; Geonwook Kim; Gunhyoung Kim; Dongho Lee; Seowoo Son; Taesung Kim
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Artificial Room-Temperature Ferromagnetism of Bulk van der Waals VSe2 (Adv. Sci. 34/2025)块体范德瓦尔斯VSe2的人工室温铁磁性 (Adv. Sci. 34/2025)
err2025-09-16
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errJinhyoung Lee; Gunhyoung Kim; Hyunho Seok; Hyunbin Choi; Hyeonjeong Lee; Seokchan Lee; Geonwook Kim; Hyunho Kim; Seowoo Son; Sihoon Son; Dongho Lee; Hosin Hwang; Hyelim Shin; Sujeong Han; Geumji Back; Alexina Ollier; Yeon-Ji Kim; Lei Fang; Gyuho Han; Goo-Eun Jung; Youngi Lee; Hyeong-U Kim; Kenji Watanabe; Takashi Taniguchi; Wonjun Shin; Suraj Cheema; Andreas Heinrich; Won-Jun Jang; Taesung Kim
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Monolithically-Integrated van der Waals Synaptic Memory via Bulk Nano-Crystallization单片集成范德华突触存储器,通过体纳米晶化实现
err2025-08-01
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errLee, Jinhyoung; Kim, Gunhyoung; Seok, Hyunho; Han, Sujeong; Shim, Hyunwoo; Cha, Yoonmi; Son, Sihoon; Choi, Hyunbin; Grzeszczyk, Magdalena; Bogucki, Aleksander; Choi, Yunseok; Kim, Seungil; Lee, Hyeonjeong; Park, Chaerin; Kim, Geonwook; Hwang, Hosin; Kim, Hyunho; Lee, Dongho; Son, Seowoo; Back, Geumji; Shin, Hyelim; Choi, Donghwan; Ollier, Alexina; Kim, Yeon-Ji; Fang, Lei; Han, Gyuho; Jung, Goo-Eun; Lee, Youngi; Kim, Hyeong-U; Watanabe, Kenji; Taniguchi, Takashi; Bae, Sanghoon; Heinrich, Andreas; Jang, Won-Jun; Kim, Taesung
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Artificial Room-Temperature Ferromagnetism of Bulk van der Waals VSe2块体范德瓦尔斯VSe2的人工室温铁磁性
err2025-05-30
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errOAAI
errJinhyoung Lee; Gunhyoung Kim; Hyunho Seok; Hyunbin Choi; Hyeonjeong Lee; Seokchan Lee; Geonwook Kim; Hyunho Kim; Seowoo Son; Sihoon Son; Dongho Lee; Hosin Hwang; Hyelim Shin; Sujeong Han; Geumji Back; Alexina Ollier; Yeon-Ji Kim; Lei Fang; Gyuho Han; Goo-Eun Jung; Youngi Lee; Hyeong-U Kim; Kenji Watanabe; Takashi Taniguchi; Wonjun Shin; Suraj Cheema; Andreas Heinrich; Won-Jun Jang; Taesung Kim
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Free-standing two-dimensional ferro-ionic memristor (vol 15, 5162, 2024)独立式二维铁离子忆阻器(vol 15, 5162, 2024)
err2024-11-07
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errLee, Jinhyoung; Woo, Gunhoo; Cho, Jinill; Son, Sihoon; Shin, Hyelim; Seok, Hyunho; Kim, Min-Jae; Kim, Eungchul; Wang, Ziyang; Jang, Won-Jun; Kim, Taesung
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Mesoporous WO3-Dot-Decorated Flexible Electrodes for the Determination of Industrial Pollutants
err2024-11-04
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errKoyappayil, Aneesh; Seok, Hyunho; Choi, Gwan Hyun; Chavan, Sachin; Yeon, Sangho; Son, Sihoon; Go, Anna; Lee, Jinhyoung; Kim, Keon-Woo; Lee, Dongho; Choi, Hyun-Bin; Kim, Hyeong-U; Kim, Jin Kon; Kim, Taesung; Lee, Min-Ho
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Cyclic Atomic Layer Etching of PdSe2
err2024-09-18
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PREAI
errKang, Ji Eun; Choi, Seung Yup; Han, Hye Won; Kim, Ji Min; Kim, Ye Eun; Seok, Hyunho; Kim, Taesung; Kim, Doo San; Yeom, Geun Young
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Electron Release via Internal Polarization Fields for Optimal S-H Bonding States
err2024-09-09
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PREAI
errSeok, Hyunho; Kim, Minjun; Cho, Jinill; Son, Sihoon; Megra, Yonas Tsegaye; Lee, Jinhyoung; Nam, Myeong Gyun; Kim, Keon-Woo; Aydin, Kubra; Yoo, Seong Soo; Lee, Hyeonjeong; Kanade, Vinit K.; Kim, Muyoung; Mun, Jihun; Kim, Jin Kon; Suk, Ji Won; Kim, Hyeong-U; Yoo, Pil J.; Kim, Taesung
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Unlocking of Schottky Barrier Near the Junction of MoS2 Heterostructure Under Electrochemical Potential电化学势下MoS2异质结结附近肖特基势垒的解锁
err2024-08-07
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errAydin, Kubra; Kim, Mansu; Seok, Hyunho; Bae, Chulwoo; Lee, Jinhyoung; Kim, Muyoung; Park, Jonghwan; Hupp, Joseph T.; Whang, Dongmok; Kim, Hyeong-U; Kim, Taesung
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Ultrastable 3D Heterogeneous Integration via N-Heterocyclic Carbene Self-Assembled Nanolayers通过N-杂环卡宾自组装纳米层实现超稳定3D异质集成
err2024-06-27
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PREAI
errLee, Jinhyoung; Woo, Gunhoo; Lee, Gyuyoung; Jeon, Jongyeong; Lee, Seunghwan; Wang, Ziyang; Shin, Hyelim; Lee, Gil-Woo; Kim, Yeon-Ji; Lee, Do-Hyun; Kim, Min-Jae; Kim, Eungchul; Seok, Hyunho; Cho, Jinill; Kang, Boseok; No, You-Shin; Jang, Won-Jun; Kim, Taesung
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Free-standing two-dimensional ferro-ionic memristor
err2024-06-18
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errLee, Jinhyoung; Woo, Gunhoo; Cho, Jinill; Son, Sihoon; Shin, Hyelim; Seok, Hyunho; Kim, Min-Jae; Kim, Eungchul; Wang, Ziyang; Kang, Boseok; Jang, Won-Jun; Kim, Taesung
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Low-Temperature, Universal Synthetic Route for Mesoporous Metal Oxides by Exploiting Synergistic Effect of Thermal Activation and Plasma利用热活化和等离子体协同效应制备介孔金属氧化物的低温通用合成路线
err2024-01-26
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PREAI
errKim, Keon-Woo; Seok, Hyunho; Son, Sihoon; Park, Su-Jeong; Yang, Chanwoo; Lee, Dongho; Lee, Hyo-Chang; Mun, Jihun; Yeom, Hee-Jung; Yoon, Min Young; Park, Bomi; Kim, Se Hyun; Jo, Changshin; Moon, Hong Chul; Kim, Taesung; Kim, Jin Kon
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Remote-Controllable Interfacial Electron Tunneling at Heterogeneous Molecular Junctions via Tip-Induced Optoelectrical Engineering
err2023-12-06
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errLee, Jinhyoung; Kim, Eungchul; Cho, Jinill; Seok, Hyunho; Woo, Gunhoo; Yu, Dayoung; Jung, Gooeun; Hwangbo, Hyeon; Na, Jinyoung; Im, Inseob; Kim, Taesung
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First-Principles Calculation Guided High-Purity Layer Control of 4 in. MoS2 by Plasma RIE
err2023-01-18
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PREAI
errKim, Changmin; Kim, Muyoung; Cho, Donghyun; Kanade, Chaitanya Kaluram; Seok, Hyunho; Bak, Moon Soo; Kim, Daewoong; Kang, Woo Seok; Kim, Taesung; Kim, Hyeong-U
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Tailoring Polymorphic Heterostructures of MoS2-WS2 (1T/1T, 2H/ 2H) for Efficient Hydrogen Evolution Reaction
err2023-01-03
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PREAI
errSeok, Hyunho; Kim, Minjun; Cho, Jinill; Kim, Eungchul; Son, Sihoon; Kim, Keon-Woo; Kim, Jin Kon; Yoo, Pil J.; Kim, Muyoung; Kim, Hyeong-U; Kim, Taesung
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