R. S. Goldman - Publications, H-index & Citations

R. S. Goldman

university of michigan system

28H指数

246论文数

3.0K被引数

收录论文 78

发表时间

Emerging conduction pathways in semiconducting bismuth-antimony alloys 半导体铋锑合金中出现的导电通路

Journal of Physics-Condensed Matter

IF2.6

2026-04-10

PREAI

Sinha, Shriya; You, Zecheng; Smolenski, Shane; Downey, Eoghan; Liu, Abby; Frisone, Sam; Birge, Adrian; Choi, Moon-Ki; Ashiquzzaman Shawon, A. K. M.; Chandler, Eric; Lin, Chun; Hashimoto, Makoto; Lu, Donghui; Lawrence Lee, Minjoo; Johnson, Harley T.; Jo, Na Hyun; Uher, Ctirad; Goldman, Rachel S.; Kurdak, Cagliyan

Influence of nitrogen on coherent longitudinal optical phonons in GaAs1-xNx 氮对GaAs1-xNx中相干纵向光学声子的影响

Journal of Applied Physics

IF2.5

2025-12-21

PREAI

Takeuchi, Hideo; Matsunaga, Kai; Sengi, Yusuke; Mitchell, Jared W.; Turkulets, Yury; Goldman, Rachel S.

Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots

APPLIED PHYSICS LETTERS

IF3.6

2025-03-01

PREAI

Brubach, J.; Huang, T. -y.; Borrely, T.; Greenhill, C.; Walrath, J.; Fedele, G.; Yang, Y. -c.; Zimmerman, A.; Goldman, R. S.

Lattice-matched multiple channel AlScN/GaN heterostructures 晶格匹配的多沟道AlScN/GaN异质结构

APL MATERIALS

IF4.5

2024-10-24

OAAI

Nguyen, Thai-Son; Pieczulewski, Naomi; Savant, Chandrashekhar; Cooper, Joshua J. P.; Casamento, Joseph; Goldman, Rachel S.; Muller, David A.; Xing, Huili G.; Jena, Debdeep

Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

APPLIED PHYSICS LETTERS

IF3.6

2024-09-18

PREAI

Huang, T. -y.; Borrely, T.; Yang, Y. -c.; Alzeidan, A.; Jacobsen, G. M.; Teodoro, M. D.; Quivy, A. A.; Goldman, R. S.

Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires

APPLIED PHYSICS LETTERS

IF3.6

2024-07-23

PREAI

Liu, A.; Xi, Z.; Li, M.; Yang, J. C.; Qi, L.; Goldman, R. S.

Onset of tetrahedral interstitial formation in GaAsN alloys

APPLIED PHYSICS LETTERS

IF3.6

2024-04-17

PREAI

Cooper, J. J. P.; Jen, T.; Novak, A.; Xi, Z.; Qi, L.; Naab, F. U.; Wang, Y. Q.; Goldman, R. S.

Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1-x-yNxBiy alloys

APPLIED PHYSICS LETTERS

IF3.6

2024-04-09

OAAI

Mitchell, J. W.; Greenhill, C. M.; Huang, T. -Y; Jen, T.; Yang, Y. -C; Hammond, K.; Heyman, J. N.; Goldman, R. S.

Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing

OPTICAL MATERIALS

IF4.2

2024-03-01

PREAI

Pavelescu, E. -M.; Ticos, D.; Ligor, O.; Romanitan, C.; Matei, A.; Comanescu, F.; Tucureanu, V.; Spanulescu, S. I.; Ticos, C.; Ohshima, T.; Nakamura, T.; Imaizumi, M.; Goldman, R. S.; Wakahara, A.; Yamane, K.

Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces

APPLIED PHYSICS LETTERS

IF3.6

2023-11-10

PREAI

Huang, T. -Y.; Occena, J.; Greenhill, C.; Borrely, T.; Yang, Y. -C.; Hu, J.; Chen, A.; Zinn, C.; Jenkins, K.; Li, L.; Kurdak, C.; Goldman, R. S.

Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2023-06-01

OAAI

Borrely, T.; Alzeidan, A.; de Lima, M. D.; Jacobsen, G. M.; Huang, T. Y.; Yang, Y. C.; Cantalice, T. F.; Goldman, R. S.; Teodoro, M. D.; Quivy, A. A.

Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

NANO ENERGY

IF17.1

2022-11-01

OAAI

Chang, Alexander S.; Li, Bingjun; Wang, Sizhen; Frisone, Sam; Goldman, Rachel S.; Han, Jung; Lauhon, Lincoln J.

Influence of gallium surface saturation on GaN nanowire polytype selection during molecular-beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2021-07-21

OAAI

Lu, H.; Moniri, S.; Reese, C.; Jeon, S.; Katcher, A.; Hill, T.; Deng, H.; Goldman, R. S.

Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

APPLIED PHYSICS LETTERS

IF3.6

2020-10-07

PREAI

Pavelescu, E. -M.; Ligor, O.; Occena, J.; Ticos, C.; Matei, A.; Gavrila, R. L.; Yamane, K.; Wakahara, A.; Goldman, R. S.

Influence of quantum dot morphology on the optical properties of GaSb/GaAs multilayers

APPLIED PHYSICS LETTERS

IF3.6

2020-06-24

PREAI

Greenhill, C.; Chang, A. S.; Zech, E. S.; Clark, S.; Balakrishnan, G.; Goldman, R. S.

Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?

SCIENTIFIC REPORTS

IF3.9

2020-04-16

OAAI

Azulay, Almog R.; Turkulets, Yury; Del Gaudio, Davide; Goldman, R. S.; Shalish, Ilan

Mechanisms of GaN quantum dot formation during nitridation of Ga droplets

APPLIED PHYSICS LETTERS

IF3.6

2020-02-13

OAAI

Lu, H.; Reese, C.; Jeon, S.; Sundar, A.; Fan, Y.; Rizzi, E.; Zhuo, Y.; Qi, L.; Goldman, R. S.

Ion irradiation of III-V semiconductor surfaces: From self-assembled nanostructures to plasmonic crystals

APPLIED PHYSICS REVIEWS

IF11.6

2019-10-23

OAAI

Kang, M.; Goldman, R. S.

Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

APPLIED PHYSICS LETTERS

IF3.6

2019-08-23

OAAI

Occena, J.; Jen, T.; Mitchell, J. W.; Linhart, W. M.; Pavelescu, E. -M.; Kudrawiec, R.; Wang, Y. Q.; Goldman, R. S.

Asymmetric 3D Elastic-Plastic Strain-Modulated Electron Energy Structure in Monolayer Graphene by Laser Shocking 激光冲击单层石墨烯中非对称三维弹塑性应变调制电子能量结构

ADVANCED MATERIALS

IF26.8

2019-03-29

OAAI

Motlag, Maithilee; Kumar, Prashant; Hu, Kevin Y.; Jin, Shengyu; Li, Ji; Shao, Jiayi; Yi, Xuan; Lin, Yen-Hsiang; Walrath, Jenna C.; Tong, Lei; Huang, Xinyu; Goldman, Rachel S.; Ye, Lei; Cheng, Gary J.

研究方向