未登录Demonstration of 651 nm InGaN-based red light-emitting diode with an external quantum efficiency over 6% by InGaN/AlN strain release interlayer
Xing, Kun; Hu, Junwei; Pan, Zhengwei; Xia, Zhihu; Jin, Zhengxian; Wang, Liancheng; Jiang, Xiaolong; Wang, Haifeng; Zeng, Hong; Wang, Xiujuan
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