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Vedvrat

机构信息待补充

5H指数
20论文数
91被引数
收录论文 4
发表时间
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Electrostatic and RF Optimization of SiGe Pocket Dual-Metal Gate TFETs for Next-Generation Nanoelectronics静电和射频优化：面向下一代纳电子学的SiGe口袋双金属栅TFETs
errTechnical Physics Letters
IF0.9
err2026-05-01
err0
PREAI
errVedvrat; Sachan, Rajeev Kumar
err分享
err收藏
High-Sensitivity Biosensing Using Graphene Nanoribbon TFET with Dual-Metal Gates and Nano-Cavity Integration高灵敏度生物传感：基于石墨烯纳米带TFET、双金属栅极和纳米腔集成的应用
errPHYSICS OF THE SOLID STATE
IF1.8
err2025-12-01
err1
PREAI
errVedvrat; Shukla, Man Mohan; Sachan, Rajeev Kumar
err分享
err收藏
Interface Trap-Induced Impact in Linearity and Small-Signal Performance of InAs-Channel TFETs: Reliability Implications界面陷阱诱导对InAs通道TFET线性度和小信号性能的影响：可靠性影响
errDoklady Physics
IF0.5
err2025-11-01
err1
PREAI
errVedvrat; Sachan, Rajeev Kumar
err分享
err收藏
Enhanced Performance and Reliability of Non-Uniform Channel Double-Gate Tunnel Field Effect Transistor with InGaSb Pocket Modulation非均匀沟道双栅隧穿场效应晶体管在InGaSb口袋调制下的性能提升与可靠性增强
errPHYSICS OF THE SOLID STATE
IF1.8
err2025-10-01
err0
PREAI
errSachan, Rajeev Kumar; Vedvrat; Bajpai, Shrish
err分享
err收藏

研究方向

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合作学者
合作期刊
M
Man Mohan Shukla
H 指数: 22 · 论文数: 47
S
Shrish Bajpai
H 指数: 10 · 论文数: 68
R
Rajeev Kumar Sachan
H 指数: 2 · 论文数: 7
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