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A. Lastras-Martı́nez

technical university of denmark

17H指数
104论文数
1.2K被引数
收录论文 25
发表时间
Singular value decomposition for deconvolution and physical insight into reflectance anisotropy in zincblende semiconductors奇异值分解用于去卷积以及闪锌矿半导体中反射各向异性的物理洞察
err2025-03-14
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errLastras-Martinez, A.; Guevara-Macias, L. E.; Martinez-Espinosa, R.; Ortega-Gallegos, J.; Lastras-Montano, M. A.; Zavala-Moran, U.; Balderas-Navarro, R. E.; Lastras-Martinez, L. F.
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Mid-infrared optical properties of non-magnetic-metal/CoFeB/MgO heterostructures
err2023-05-09
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errFlores-Camacho, J. M.; Rana, Bivas; Balderas-Navarro, R. E.; Lastras-Martinez, A.; Otani, Yoshichika; Puebla, Jorge
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TO-phonon anisotropies in a highly doped InP (001) grating structure
err2021-10-04
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PREAI
errEspinosa-Cuellar, L. D.; Lastras-Martinez, L. F.; Balderas-Navarro, R. E.; Castro-Garcia, R.; Lastras-Martinez, A.; Flores-Camacho, J. M.; Panah, Mohammad Esmail Aryaee; Semenova, Elizaveta; Lavrinenko, Andrei V.
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Optical anisotropies of asymmetric double GaAs (001) quantum wells
err2021-01-25
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errOAAI
errRuiz-Cigarrillo, O.; Lastras-Martinez, L. F.; Cerda-Mendez, E. A.; Flores-Rangel, G.; Bravo-Velazquez, C. A.; Balderas-Navarro, R. E.; Lastras-Martinez, A.; Ulloa-Castillo, N. A.; Biermann, K.; Santos, P., V
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Optical contrast in the near-field limit for structural characterization of graphene nanoribbons用于石墨烯纳米带结构表征的近场极限中的光学对比度
err2021-01-01
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PREAI
errFlores-Rangel, G.; Lastras-Martinez, L. F.; Castro-Garcia, R.; Ruiz-Cigarrillo, O.; Balderas-Navarro, R. E.; Espinosa-Cuellar, L. D.; Lastras-Martinez, A.; Lopes, J. M. J.
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Two-dimensional electron gas in a metal/amorphous oxide interface with spin-orbit interaction
err2019-12-24
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errManuel Flores-Camacho, Jose; Puebla, Jorge; Auvray, Florent; Lastras-Martinez, Alfonso; Otani, Yoshichika; Eduardo Balderas-Navarro, Raul
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On the origin of reflectance-anisotropy oscillations during GaAs (001) homoepitaxy关于GaAs (001) 同质外延过程中反射率各向异性振荡的起源
err2018-05-01
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PREAI
errOrtega-Gallegos, J.; Guevara-Macias, L. E.; Ariza-Flores, A. D.; Castro-Garcia, R.; Lastras-Martinez, L. F.; Balderas-Navarro, R. E.; Lopez-Estopier, R. E.; Lastras-Martinez, A.
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Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001)InAs/GaAs/(001) 外延生长过程中的实时反射差光谱
err2017-11-01
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PREAI
errArmenta-Franco, A.; Lastras-Martinez, A.; Ortega-Gallegos, J.; Ariza-Flores, D.; Guevara-Macias, L. E.; Balderas-Navarro, R. E.; Lastras-Martinez, L. F.
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Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy
err2014-11-03
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errOAAI
errUlloa-Castillo, N. A.; Lastras-Martinez, L. F.; Balderas-Navarro, R. E.; Herrera-Jasso, R.; Lastras-Martinez, A.
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Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth
err2014-03-14
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errLastras-Martinez, A.; Ortega-Gallegos, J.; Guevara-Macias, L. E.; Nunez-Olvera, O.; Balderas-Navarro, R. E.; Lastras-Martinez, L. F.; Lastras-Montano, L. A.; Lastras-Montano, M. A.
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Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001)
err2013-01-07
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PREAI
errBalderas-Navarro, R. E.; Ulloa-Castillo, N. A.; Arimoto, K.; Ramirez-Melendez, G.; Lastras-Martinez, L. F.; Furukawa, H.; Yamanaka, J.; Lastras-Martinez, A.; Flores-Camacho, J. M.; Usami, N.; Stifter, D.; Hingerl, K.
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Optical anisotropies of Si grown on step-graded SiGe(110) layers
err2010-03-01
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PREAI
errBalderas-Navarro, R. E.; Lastras-Martinez, L. F.; Arimoto, K.; Castro-Garcia, R.; Villalobos-Aguilar, O.; Lastras-Martinez, A.; Nakagawa, K.; Sawano, K.; Shiraki, Y.; Usami, N.; Nakajima, K.
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Effect of reconstruction-induced strain on the reflectance difference spectroscopy of GaAs (001) around E1 and E1+Δ1 transitions
err2007-06-13
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PREAI
errLastras-Martinez, L. F.; Flores-Camacho, J. M.; Balderas-Navarro, R. E.; Chavira-Rodriguez, M.; Lastras-Martinez, A.; Cardona, M.
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Structure and homoepitaxial growth of GaAs(631)
err2006-05-01
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PREAI
errMendez-Garcia, V. H.; Ramirez-Arenas, F. J.; Lastras-Martinez, A.; Cruz-Hernandez, E.; Pulzara-Mora, A.; Rojas-Ramirez, J. S.; Lopez-Lopez, M.
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Quantum Hall effect devices based on AlGaAs/GaAs structures studied by photoreflectance spectroscopy
err2004-11-01
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PREAI
errZamora-Peredo, L; López-López, M; Rivera, Z; Guillén, A; Rodríguez-Váquez, AG; Ramírez-Flores, G; Lastras-Martínez, A; Méndez-García, VH
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Reflectance difference spectroscopy of GaAs(001) under a [110] uniaxial stress -: art. no. 035306
err2004-07-15
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PREAI
errLastras-Martínez, LF; Chavira-Rodríguez, M; Balderas-Navarro, RE; Flores-Camacho, JM; Lastras-Martínez, A
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In situ monitoring of the 2D-3D growth-mode transition in In0.3Ga0.7As/GaAs(001) by reflectance-difference spectroscopy
err2004-01-01
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PREAI
errMedel-Ruiz, CI; Lastras-Martínez, A; Balderas-Navarro, RE; Gallardo, SL; Méndez-García, VH; Flores-Camacho, JM; Gaona-Couto, A; Lastras-Martínez, LF
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Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs:: a possible effect of pit filling and difference in thermal expansion coefficients
err1999-10-01
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PREAI
errConstantino, ME; Navarro-Contreras, H; Vidal, MA; Salazar-Hernández, B; Lastras-Martínez, A; Hernández-Calderón, I; López-López, M
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