Islam Sayed - Publications, H-index & Citations

Islam Sayed

University of California System

11H指数

37论文数

371被引数

收录论文 12

发表时间

Role of Quasi-Fermi potential in modeling III-V TFETs: InAs as a case study

AIN SHAMS ENGINEERING JOURNAL

IF5.9

2023-07-01

OAAI

Shaker, Ahmed; Sayed, Islam; Abouelatta, Mohamed; Fikry, Wael; Salem, S. Marwa; El-Banna, Mohamed

Investigation of gate leakage current in TFET: A semi-numerical approach

ALEXANDRIA ENGINEERING JOURNAL

IF6.8

2023-06-01

OAAI

Tawfik, N. M. S.; Shaker, A.; Sayed, I.; Kamel, H.; Salem, M. S.; Dessouky, M.; Fedawy, M.

Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

APPLIED PHYSICS LETTERS

IF3.6

2021-07-30

PREAI

Collins, Henry; Sayed, Islam; Liu, Wenjian; Pasayat, Shubhra S.; Taylor, Aidan A.; Li, Weiyi; Keller, Stacia; Mishra, U. K.

Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions

APPLIED PHYSICS LETTERS

IF3.6

2021-07-27

OAAI

Mohanty, Subhajit; Sayed, Islam; Jian, Zhe (Ashley); Mishra, Umesh; Ahmadi, Elaheh

Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001)

APPLIED PHYSICS LETTERS

IF3.6

2021-04-26

OAAI

Jian, Zhe (Ashley); Sayed, Islam; Liu, Wenjian; Mohanty, Subhajit; Ahmadi, Elaheh

Multi-junction solar cells by Intermetallic Bonding and interconnect of Dissimilar Materials: GaAs/Si

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2020-09-01

OAAI

Hagar, Brandon; Sayed, Islam; Colter, Peter C.; Bedair, S. M.

Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

APPLIED PHYSICS LETTERS

IF3.6

2020-07-28

OAAI

Krishna, Athith; Raj, Aditya; Hatui, Nirupam; Sayed, Islam; Keller, Stacia; Mishra, Umesh K.

An improved methodology for extracting interface state density at Si3N4/GaN

APPLIED PHYSICS LETTERS

IF3.6

2020-01-14

OAAI

Liu, Wenjian; Sayed, Islam; Gupta, Chirag; Li, Haoran; Keller, Stacia; Mishra, Umesh

Electrical properties and interface abruptness of AlSiO gate dielectric grown on (000(1)over-bar) N-polar and (0001) Ga-polar GaN

APPLIED PHYSICS LETTERS

IF3.6

2019-10-22

OAAI

Sayed, Islam; Bonef, Bastien; Liu, Wenjian; Chan, Silvia; Georgieva, Jana; Speck, James S.; Keller, Stacia; Mishra, Umesh K.

Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN

APPLIED PHYSICS LETTERS

IF3.6

2019-07-17

PREAI

Sayed, Islam; Liu, Wenjian; Chan, Silvia; Gupta, Chirag; Guidry, Matthew; Li, Haoran; Keller, Stacia; Mishra, Umesh

100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

APPLIED PHYSICS LETTERS

IF3.6

2017-08-25

OAAI

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; Geisz, John F.; Bedair, S. M.

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

APPLIED PHYSICS LETTERS

IF3.6

2016-05-19

PREAI

Bedair, S. M.; Harmon, Jeffrey L.; Carlin, C. Zachary; Sayed, Islam E. Hashem; Colter, P. C.

研究方向