Masamichi Akazawa - Publications, H-index & Citations

Masamichi Akazawa

hokkaido university

23H指数

152论文数

1.8K被引数

收录论文 16

发表时间

Possible Origin of Near-Interface Donor-Like Defects in p-Type Gallium Nitride Metal-Oxide-Semiconductor Structures 近界面处p型氮化镓金属-氧化物-半导体结构中类施主缺陷的可能起源

Physica Status Solidi A-Applications and Materials Science

IF1.9

2026-05-22

PREAI

Takahashi, Masanobu; Shimazaki, Takahiro; Sato, Taketomo; Akazawa, Masamichi

Sub-bandgap-light-assisted capacitance-voltage study of gap states near valence band maximums at AlSiO/GaN interfaces with and without an AlN interfacial layer 亚带隙光辅助电容-电压法研究含与不含AlN界面层的AlSiO/GaN界面价带顶附近的隙态

Journal of Applied Physics

IF2.5

2026-05-21

PREAI

Takahashi, Masanobu; Takane, Hitoshi; Iguchi, Hiroko; Narita, Tetsuo; Ito, Kenji; Akazawa, Masamichi

Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN

APPLIED PHYSICS LETTERS

IF3.6

2013-06-14

OAAI

Akazawa, Masamichi; Chiba, Masahito; Nakano, Takuma

Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition

APPLIED PHYSICS LETTERS

IF3.6

2012-09-21

PREAI

Akazawa, M.; Nakano, T.

Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2011-04-07

PREAI

Akazawa, M.; Gao, B.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N.

Surface passivation of III-V semiconductors for future CMOS devices-Past research, present status and key issues for future 用于未来CMOS器件的iii-v半导体的表面钝化-过去的研究，现状和未来的关键问题

APPLIED SURFACE SCIENCE

IF6.9

2010-07-01

PREAI

Hasegawa, H.; Akazawa, M.; Domanowska, A.; Adamowicz, B.

High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers

APPLIED SURFACE SCIENCE

IF6.9

2010-07-01

OAAI

Akazawa, M.; Hasegawa, H.

Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2010-03-31

OAAI

Akazawa, M.; Matsuyama, T.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N.

Optimization of Si interface control layer thickness for high-k GaAs metal-insulator-semiconductor structures

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2009-11-01

PREAI

Akazawa, Masamichi; Hasegawa, Hideki

Surface passivation technology for III-V semiconductor nanoelectronics Iii-v族半导体纳米电子学的表面钝化技术

APPLIED SURFACE SCIENCE

IF6.9

2008-11-01

PREAI

Hasegawa, Hideki; Akazawa, Masamichi

Interface models and processing technologies for surface passivation and interface control in III-V semiconductor nanoelectronics

APPLIED SURFACE SCIENCE

IF6.9

2008-10-01

PREAI

Hasegawa, H.; Akazawa, M.

Mechanism and control of current transport in GaN and AlGaN Schottky barriers for chemical sensor applications

APPLIED SURFACE SCIENCE

IF6.9

2008-04-01

PREAI

Hasegawa, Hideki; Akazawa, Masamichi

Effect of a thin dielectric layer on terahertz transmission characteristics for metal hole arrays

OPTICS LETTERS

IF3.3

2005-05-15

PREAI

Tanaka, M; Miyamaru, F; Hangyo, M; Tanaka, T; Akazawa, M; Sano, E

CxFy polymer film deposition in DC and RF fluorinert vapor plasmas

VACUUM

IF3.9

2000-10-01

PREAI

Lungu, CP; Lungu, AM; Sakai, Y; Sugawara, H; Tabata, M; Akazawa, M; Miyamoto, M

A functional vMOS circuit for implementing cellular-automaton picture-processing devices

COMPUTERS & ELECTRICAL ENGINEERING

IF4.9

1997-11-01

PREAI

Ikebe, M; Akazawa, M; Amemiya, Y

Boltzmann machine neuron circuit using single-electron tunneling

APPLIED PHYSICS LETTERS

IF3.6

1997-02-03

PREAI

Akazawa, M; Amemiya, Y

研究方向