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H

H. Tecimer

Karabuk University

21H指数
32论文数
1.1K被引数
收录论文 11
发表时间
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Time-dependent behaviour of dielectric properties of Co/Zn-doped PVA interlayered Schottky structures after gamma-ray exposure经伽马射线照射后，Co/Zn掺杂PVA夹层肖特基结构的介电性能的时间依赖性行为
errJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
IF2.8
err2025-03-17
err0
errOAAI
errTecimer, Hueseyin
err分享
err收藏
Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact
errMATERIALS TODAY COMMUNICATIONS
IF4.5
err2023-06-01
err16
PREAI
errKaymaz, Ahmet; Baydilli, Esra Evcin; Tecimer, Hueseyin; Tecimer, Habibe Uslu; Altindal, Semsettin
err分享
err收藏
Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes
errPOLYMER BULLETIN
IF4
err2018-01-11
err20
PREAI
errTecimer, Habibe Uslu; Alper, M. A.; Tecimer, H.; Tan, S. O.; Altindal, S.
err分享
err收藏
Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures
errCOMPOSITES PART B-ENGINEERING
IF14.2
err2017-03-01
err63
PREAI
errCicek, O.; Tecimer, H. Uslu; Tan, S. O.; Tecimer, H.; Orak, I.; Altindal, S.
err分享
err收藏
Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions
errCOMPOSITES PART B-ENGINEERING
IF14.2
err2016-08-01
err74
PREAI
errCicek, O.; Tecimer, H. Uslu; Tan, S. O.; Tecimer, H.; Altindal, S.; Uslu, I.
err分享
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Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC plus TCNQ/p-Si structuresAu/PVC和TCNQ/p-si结构中介电性能和交流电导率的温度和电压依赖性
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2014-12-01
err26
PREAI
errYucedag, I.; Kaya, A.; Tecimer, H.; Altindal, S.
err分享
err收藏
A comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2014-12-01
err22
PREAI
errKaya, A.; Yucedag, I.; Tecimer, H.; Altindal, S.
err分享
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Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2014-12-01
err31
PREAI
errAltindal, S.; Tunc, T.; Tecimer, H.; Yucedag, I.
err分享
err收藏
On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)
errCOMPOSITES PART B-ENGINEERING
IF14.2
err2014-02-01
err82
PREAI
errTecimer, H.; Uslu, H.; Alahmed, Z. A.; Yakuphanoglu, F.; Altindal, S.
err分享
err收藏
Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)Au/(Zn掺杂) PVA/n-gaas肖特基势垒二极管 (sbd) 中的温度相关电流传输机制
errSENSORS AND ACTUATORS A-PHYSICAL
IF4.9
err2013-09-01
err72
PREAI
errTecimer, H.; Turut, A.; Uslu, H.; Altindal, S.; Uslu, I.
err分享
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Schottky diode properties of CuInSe2 films prepared by a two-step growth technique
errSENSORS AND ACTUATORS A-PHYSICAL
IF4.9
err2012-10-01
err36
PREAI
errTecimer, H.; Aksu, S.; Uslu, H.; Atasoy, Y.; Bacaksiz, E.; Altindal, S.
err分享
err收藏

研究方向

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合作学者
合作期刊
Ş
Ş. Altındal
H 指数: 62 · 论文数: 410
A
A. Türüt
H 指数: 56 · 论文数: 308
E
E. Bacaksız
H 指数: 35 · 论文数: 156
İ
İkram Orak
H 指数: 28 · 论文数: 111
Z
Z.A. Alahmed
H 指数: 25 · 论文数: 83
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