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H

H. Boudinov

Universidade Federal do Rio Grande do Sul

21H指数
162论文数
1.9K被引数
收录论文 35
发表时间
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Controlling the structural and optical properties of tungsten oxide films synthesized under environmentally friendly conditions
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2021-02-01
err3
PREAI
errda Costa, Nadja B. D.; Pazinato, Julia C. O.; Sombrio, Guilherme; Pereira, Marcelo B.; Boudinov, Henri; Guendel, Andre; Moreira, Eduardo C.; Garcia, Irene T. S.
err分享
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Instability of p-i-n perovskite solar cells under reverse bias
errJOURNAL OF MATERIALS CHEMISTRY A
IF9.5
err2020-01-01
err96
errOAAI
errRazera, Ricardo A. Z.; Jacobs, Daniel A.; Fu, Fan; Fiala, Peter; Dussouillez, Marion; Sahli, Florent; Yang, Terry C. J.; Ding, Laura; Walter, Arnaud; Feil, Adriano F.; Boudinov, Henri I.; Nicolay, Sylvain; Ballif, Christophe; Jeangros, Quentin
err分享
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Chemical Doping and Etching of Graphene: Tuning the Effects of NO Annealing
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2019-10-07
err2
PREAI
errRolim, G. K.; Soares, G. V.; Boudinov, H. I.; Radtke, C.
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Combining GeO2 passivation strategies aiming at dielectric layers with superior properties on germanium substrates
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2019-01-01
err7
PREAI
errEtcheverry, Louise Patron; Boudinov, Henri Ivanov; Soares, Gabriel Vieira; Radtke, Claudio
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Degradation of current due to charge transport in top gated P3HT-PVA organic field effect transistors
errSYNTHETIC METALS
IF4.6
err2017-07-01
err7
PREAI
errLeite, Gabriel V.; Van Etten, Eliana A.; Forte, Maria M. G.; Boudinov, Henri
err分享
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Magnetoresistance of doped silicon
errPHYSICAL REVIEW B
IF3.7
err2015-06-09
err7
errOAAI
errda Silva, Antonio Ferreira; Levine, Alexandre; Momtaz, Zahra Sadre; Boudinov, Henri; Sernelius, Bo E.
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Low temperature and decay lifetime photoluminescence of Eu and Tb nanoparticles embedded into SiO2
errJOURNAL OF LUMINESCENCE
IF3.6
err2014-09-01
err2
PREAI
errBregolin, F. L.; Franzen, P.; Boudinov, H.; Sias, U. S.; Behar, M.
err分享
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SiO2/SiC structures annealed in D2 18O: Compositional and electrical effects
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-03-18
err7
errOAAI
errPitthan, E.; Correa, S. A.; Soares, G. V.; Boudinov, H. I.; Stedile, F. C.
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Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
errAPL MATERIALS
IF4.5
err2013-08-09
err10
errOAAI
errPitthan, E.; Lopes, L. D.; Palmieri, R.; Correa, S. A.; Soares, G. V.; Boudinov, H. I.; Stedile, F. C.
err分享
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Multiple position sensitive photodetector for optical differential detection
errSENSORS AND ACTUATORS A-PHYSICAL
IF4.9
err2013-06-01
err1
PREAI
errde Souza, E. L.; Boudinov, H.; Correia, R. R. B.
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Photoluminescence from SiNxOy films deposited by reactive sputtering
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2013-05-24
err10
PREAI
errSombrio, G.; Franzen, P. L.; Maltez, R. L.; Matos, L. G.; Pereira, M. B.; Boudinov, H.
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Raman and TEM characterization of high fluence C implanted nanometric Si on insulator
errAPPLIED SURFACE SCIENCE
IF6.9
err2012-07-01
err12
errOAAI
errdos Reis, R. M. S.; Maltez, R. L.; Moreira, E. C.; Dias, Y. P.; Boudinov, H.
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Distinguishing bulk traps and interface states in deep-level transient spectroscopy
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2011-07-08
err34
PREAI
errCoelho, A. V. P.; Adam, M. C.; Boudinov, H.
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Carbon redistribution in nanometric Si1-xCx layers upon ion beam synthesis of SiC by C implantation into SIMOX(111)
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2010-09-14
err4
PREAI
errdos Reis, R. M. S.; Maltez, R. L.; Boudinov, H.
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Deep levels fine structure in proton implanted p-type GaAs
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2010-05-06
err2
PREAI
errCoelho, A. V. P.; Adam, M. C.; Boudinov, H.
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Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-09-17
err29
errOAAI
errPalmieri, R.; Radtke, C.; Boudinov, H.; da Silva, E. F., Jr.
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Effect of excess vacancy concentration on As and Sb doping in Si
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2009-07-31
err0
errOAAI
errDalponte, M.; Adam, M. C.; Boudinov, H. I.; Goncharova, L. V.; Feng, T.; Garfunkel, E.; Gustafsson, T.
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Trapping of majority carriers in SiO2/4H-SiC structures
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2009-05-21
err18
PREAI
errPalmieri, R.; Radtke, C.; Silva, M. R.; Boudinov, H.; da Silva, E. F., Jr.
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Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics
errAPPLIED SURFACE SCIENCE
IF6.9
err2008-11-01
err13
PREAI
errPalmieri, R.; Boudinov, H.; Radtke, C.; da Silva, E. F., Jr.
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Emission rate dependence on the electric field for two trap levels in proton-irradiated n-type GaAs
errPHYSICAL REVIEW B
IF3.7
err2008-06-16
err11
PREAI
errCoelho, A. V. P.; Boudinov, H.
err分享
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研究方向

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