Nobuhiko Sawaki - Publications, H-index & Citations

Nobuhiko Sawaki

Aichi Institute of Technology

40H指数

332论文数

8.8K被引数

收录论文 21

发表时间

Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates

APPLIED PHYSICS LETTERS

IF3.6

2011-02-22

PREAI

Feng, I. W.; Cao, X. K.; Li, J.; Lin, J. Y.; Jiang, H. X.; Sawaki, N.; Honda, Y.; Tanikawa, T.; Zavada, J. M.

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1(1)over-bar01) semipolar GaN

APPLIED PHYSICS LETTERS

IF3.6

2011-01-31

PREAI

Wu, Z. H.; Tanikawa, T.; Murase, T.; Fang, Y. -Y.; Chen, C. Q.; Honda, Y.; Yamaguchi, M.; Amano, H.; Sawaki, N.

Semi-polar GaN LEDs on Si substrate Si衬底上的半极性GaN led

SCIENCE CHINA-TECHNOLOGICAL SCIENCES

IF4.9

2010-12-30

PREAI

Sawaki, Nobuhiko; Honda, Yoshio

Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2009-01-30

PREAI

Han, Xiuxun; Honda, Yoshio; Narita, Tetsuo; Yamaguchi, Masahito; Sawaki, Nobuhiko; Tanaka, Tooru; Guo, Qixin; Nishio, Mitsushiro

Resonant coupling of an exciton in a quantum disc with a propagating mode of an exciton-polariton in a nearby waveguide

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2005-05-06

PREAI

Takagi, H; Tanaka, H; Yamaguchi, M; Sawaki, N

Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy

APPLIED SURFACE SCIENCE

IF6.9

2005-04-01

PREAI

Ahn, HS; Kim, KH; Yang, M; Yi, JY; Lee, HJ; Cho, CR; Cho, HK; Kim, SW; Narita, T; Honda, Y; Yamaguchi, M; Sawaki, N

Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate

APPLIED PHYSICS LETTERS

IF3.6

2004-06-07

PREAI

Hikosaka, T; Narita, T; Honda, Y; Yamaguchi, M; Sawaki, N

Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2002-01-14

145

PREAI

Honda, Y; Kuroiwa, Y; Yamaguchi, M; Sawaki, N

Structural characterization of GaN laterally overgrown on a (111)Si substrate

APPLIED PHYSICS LETTERS

IF3.6

2001-08-13

PREAI

Tanaka, S; Honda, Y; Sawaki, N; Hibino, M

Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE

APPLIED SURFACE SCIENCE

IF6.9

2000-10-01

PREAI

Zhu, QS; Matsushima, H; Hiramatsu, K; Sawaki, N

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples

APPLIED PHYSICS LETTERS

IF3.6

2000-06-05

PREAI

Kaschner, A; Hoffmann, A; Thomsen, C; Bertram, F; Riemann, T; Christen, J; Hiramatsu, K; Sone, H; Sawaki, N

Defect structure in selective area growth GaN pyramid on (111)Si substrate

APPLIED PHYSICS LETTERS

IF3.6

2000-05-08

112

PREAI

Tanaka, S; Kawaguchi, Y; Sawaki, N; Hibino, M; Hiramatsu, K

Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN

JOURNAL OF LUMINESCENCE

IF3.6

2000-05-01

PREAI

Kaschner, A; Holst, J; Hoffmann, A; Broser, I; Fischer, P; Bertram, F; Riemann, T; Christen, J; Hiramatsu, K; Shibata, T; Sawaki, N

Nitrogen vacancy scattering in n-GaN grown by metal-organic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2000-03-20

PREAI

Zhu, QS; Sawaki, N

Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN

APPLIED PHYSICS LETTERS

IF3.6

1999-12-06

PREAI

Holst, J; Kaschner, A; Hoffmann, A; Fischer, P; Bertram, F; Riemann, T; Christen, J; Hiramatsu, K; Shibata, T; Sawaki, N

Field emission study of gated GaN and Al0.1Ga0.9N/GaN pyramidal field emitter arrays

APPLIED PHYSICS LETTERS

IF3.6

1999-11-22

PREAI

Kozawa, T; Ohwaki, T; Taga, Y; Sawaki, N

Surface plasmon-enhanced photoluminescence from a single quantum well

APPLIED PHYSICS LETTERS

IF3.6

1999-09-13

131

PREAI

Hecker, NE; Höpfel, RA; Sawaki, N; Maier, T; Strasser, G

Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN

APPLIED PHYSICS LETTERS

IF3.6

1999-05-31

PREAI

Kaschner, A; Hoffmann, A; Thomsen, C; Bertram, F; Riemann, T; Christen, J; Hiramatsu, K; Shibata, T; Sawaki, N

Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

1999-01-18

155

PREAI

Bertram, F; Riemann, T; Christen, J; Kaschner, A; Hoffmann, A; Thomsen, C; Hiramatsu, K; Shibata, T; Sawaki, N

Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

1998-10-05

OAAI

Nagai, H; Zhu, QS; Kawaguchi, Y; Hiramatsu, K; Sawaki, N

研究方向