I. Bhat - Publications, H-index & Citations

I. Bhat

indian institute of technology (iit) - madras

21H指数

162论文数

1.7K被引数

收录论文 11

发表时间

Multiscale Electrochemical-Mechanical Modeling of Hard Carbon Anodes in Na-Ion Batteries 钠离子电池中硬碳负极的多尺度电化学-力学建模

ACS Applied Energy Materials

IF5.5

2026-02-01

PREAI

Sahu, Susmit Kumar; Bhat, Ishan; Mudassir, Mohammed Wasay; Dingari, Naga Neehar; Goverapet Srinivasan, Sriram

Interfacial engineering to manipulate the effective spin Hall angle of perpendicularly magnetized systems

APPLIED PHYSICS LETTERS

IF3.6

2024-01-17

OAAI

Maji, Saikat; Chauhan, Kartikey Pratap; Bhat, Ishan; Mukhopadhyay, Ankan; Kayal, Soubhik; Kumar, P. S. Anil

Reactive ion etching of GaN in BCl3/N-2 plasmas

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Fedison, JB; Chow, TP; Lu, H; Bhat, IB

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate CdS缓冲范德华云母衬底上外延CdTe薄膜的表面和界面

APPLIED SURFACE SCIENCE

IF6.9

2017-08-01

OAAI

Yang, Y. -B.; Seewald, L.; Mohanty, Dibyajyoti; Wang, Y.; Zhang, L. H.; Kisslinger, K.; Xie, Weiyu; Shi, J.; Bhat, I.; Zhang, Shengbai; Lu, T. -M.; Wang, G. -C.

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

APPLIED PHYSICS LETTERS

IF3.6

2016-09-15

PREAI

Ahmed, K.; Dahal, R.; Weltz, A.; Lu, J. -Q.; Danon, Y.; Bhat, I. B.

Instrument response of reflection high energy electron diffraction pole figure

APPLIED SURFACE SCIENCE

IF6.9

2014-01-01

PREAI

Chen, L.; Dash, J.; Su, P.; Lin, C. F.; Bhat, I.; Lu, T. -M.; Wang, G. -C.

Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency

APPLIED PHYSICS LETTERS

IF3.6

2012-06-15

PREAI

Dahal, R.; Huang, K. C.; Clinton, J.; LiCausi, N.; Lu, J. -Q.; Danon, Y.; Bhat, I.

Effect of C/Si ratio on deep levels in epitaxial 4H-SiC

APPLIED PHYSICS LETTERS

IF3.6

2006-03-23

OAAI

Litton, CW; Johnstone, D; Akarca-Biyikli, S; Ramaiah, KS; Bhat, I; Chow, TP; Kim, JK; Schubert, EF

Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates

APPLIED PHYSICS LETTERS

IF3.6

2000-02-21

PREAI

Schowalter, LJ; Shusterman, Y; Wang, R; Bhat, I; Arunmozhi, G; Slack, GA

Electrical characteristics of magnesium-doped gallium nitride junction diodes

APPLIED PHYSICS LETTERS

IF3.6

1998-06-01

113

PREAI

Fedison, JB; Chow, TP; Lu, H; Bhat, IB

p-type GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source

APPLIED PHYSICS LETTERS

IF3.6

1996-12-16

PREAI

Ehsani, H; Bhat, I; Gutmann, R; Charache, G

研究方向