H.‐J. Stöckmann - Publications, H-index & Citations

H.‐J. Stöckmann

philipps university marburg

32H指数

202论文数

4.9K被引数

收录论文 13

发表时间

Spin resonance without a spin: A microwave analog 无自旋的旋进共振：一种微波类比

PHYSICAL REVIEW E

IF2.4

2025-11-13

PREAI

Hofmann, Tobias; Schmidt, Finn; Stockmann, Hans-Jurgen; Kuhl, Ulrich

Transport studies in three-terminal microwave graphs with orthogonal, unitary, and symplectic symmetry

PHYSICAL REVIEW B

IF3.7

2018-08-24

OAAI

Martinez-Arguello, A. M.; Rehemanjiang, A.; Martinez-Mares, M.; Mendez-Bermudez, J. A.; Stoeckmann, H-J; Kuhl, U.

Surface scattering and band gaps in rough waveguides and nanowires

PHYSICAL REVIEW B

IF3.7

2012-11-27

OAAI

Dietz, O.; Stoeckmann, H. -J.; Kuhl, U.; Izrailev, F. M.; Makarov, N. M.; Doppler, J.; Libisch, F.; Rotter, S.

Microwave realization of quasi-one-dimensional systems with correlated disorder

PHYSICAL REVIEW B

IF3.7

2011-04-12

OAAI

Dietz, O.; Kuhl, U.; Stoeckmann, H. -J.; Makarov, N. M.; Izrailev, F. M.

Dirac point and edge states in a microwave realization of tight-binding graphene-like structures

PHYSICAL REVIEW B

IF3.7

2010-09-21

OAAI

Kuhl, U.; Barkhofen, S.; Tudorovskiy, T.; Stoeckmann, H-J; Hossain, T.; de Parny, L. de Forges; Mortessagne, F.

One dimensional Kronig-Penney model with positional disorder: Theory versus experiment

PHYSICAL REVIEW B

IF3.7

2009-09-15

OAAI

Luna-Acosta, G. A.; Izrailev, F. M.; Makarov, N. M.; Kuhl, U.; Stoeckmann, H. -J.

Vacancy distribution around isolated implantation sites -: art. no. 131907 孤立的植入部位周围的空缺分布-: 艺术。131907号

APPLIED PHYSICS LETTERS

IF3.6

2005-09-21

PREAI

Ittermann, B; Füllgrabe, M; Stöckmann, HJ; Kroll, F; Peters, D; Ackermann, H

Scanning Fourier spectroscopy:: A microwave analog study to image transmission paths in quantum dots -: art. no. 045315

PHYSICAL REVIEW B

IF3.7

2003-07-25

OAAI

Kim, YH; Barth, M; Kuhl, U; Stöckmann, HJ; Bird, JP

Wave function scarring in open quantum dots:: A microwave-billiard analog study -: art. no. 165317

PHYSICAL REVIEW B

IF3.7

2002-04-05

PREAI

Kim, YH; Barth, M; Stöckmann, HJ; Bird, JP

Diffusion parameters of B in Cu determined by β-radiation-detected NMR -: art. no. 224302

PHYSICAL REVIEW B

IF3.7

2001-11-20

PREAI

Füllgrabe, M; Ittermann, B; Stöckmann, HJ; Kroll, F; Peters, D; Ackermann, H

Local structure of implanted B in amorphous Si

APPLIED PHYSICS LETTERS

IF3.6

2001-07-16

PREAI

Mai, F; Ittermann, B; Füllgrabe, M; Heemeier, M; Kroll, F; Marbach, K; Meier, P; Mell, H; Peters, D; Thiess, H; Ackermann, H; Stöckmann, HJ

Defect properties of ion-implanted nitrogen in ZnSe -: art. no. 241201

PHYSICAL REVIEW B

IF3.7

2001-06-08

PREAI

Marbach, K; Ittermann, B; Füllgrabe, M; Heemeier, M; Kroll, F; Mai, F; Meier, P; Peters, D; Thiess, H; Ackermann, H; Stöckmann, HJ; Zeitz, WD; Wenisch, H; Hommel, D; Landwehr, G

Boron implantation doping of diamond

APPLIED PHYSICS LETTERS

IF3.6

1997-12-22

PREAI

Ittermann, B; Bharuth-Ram, K; Metzner, H; Fullgrabe, M; Heemeier, M; Kroll, F; Mai, F; Marbach, K; Meier, P; Peters, D; Thiess, H; Ackermann, H; Stockmann, HJ; Sellschop, JPF

研究方向