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Cyril Paranthoën

universite de rennes

19H指数
146论文数
1.6K被引数
收录论文 29
发表时间
Luminance and Brightness: Application to Lanthanide-Based Coordination Polymers
err2022-11-17
err13
PREAI
errBlais, Chloe; Calvez, Guillaume; Suffren, Yan; Daiguebonne, Carole; Paranthoen, Cyril; Bazin, Eric; Freslon, Stephane; Bernot, Kevin; Guillou, Olivier
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Quantum dot membrane external-cavity surface-emitting laser at 1.5 μm
err2021-06-07
err12
errOAAI
errPhung, H-M; Tatar-Mathes, P.; Paranthoen, C.; Levallois, C.; Chevalier, N.; Perrin, M.; Kerchaoui, A.; Kahle, H.; Alouini, M.; Guina, M.
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Electrically pumped shot-noise limited class A VECSEL at telecom wavelength
err2021-05-11
err1
errOAAI
errKerchaoui, Anwar; Mereuta, Alexandru; Caliman, Andrei; Paranthoen, Cyril; Levallois, Christophe; Batte, Thomas; Hamel, Cyril; Bouhier, Steve; Le Corre, Alain; Kapon, Eli; Alouini, Mehdi
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Modeling the Lamb mode-coupling constant of quantum well semiconductor lasers
err2020-07-07
err0
errOAAI
errVallet, Arthur; Chusseau, Laurent; Philippe, Fabrice; Jean-Marie, Alain; Brevalle, Gaelle; Alouini, Mehdi; Paranthoen, Cyril
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InAs/InP quantum dot VECSEL emitting at 1.5 μm
err2019-10-22
err11
errOAAI
errNechay, K.; Mereuta, A.; Paranthoen, C.; Brevalle, G.; Levallois, C.; Alouini, M.; Chevalier, N.; Perrin, M.; Suruceanu, G.; Caliman, A.; Guina, M.; Kapon, E.
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Direct measurement of the spectral dependence of Lamb coupling constant in a dual frequency quantum well-based VECSEL
err2019-07-15
err4
errOAAI
errBrevalle, Gaelle; Pes, Salvatore; Paranthoen, Cyril; Perrin, Mathieu; Levallois, Christophe; Hamel, Cyril; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Vallet, Arthur; Chusseau, Laurent; Folliot, Herve; Alouini, Mehdi
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Lamb mode-coupling constant in quantum-dot semiconductor lasers
err2018-10-10
err4
PREAI
errChusseau, Laurent; Vallet, Arthur; Perrin, Mathieu; Paranthoen, Cyril; Alouini, Mehdi
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Liquid crystal-based tunable photodetector operating in the telecom C-band
err2018-09-20
err12
errOAAI
errLevallois, Christophe; Sadani, Benattou; Boisnard, Benjamin; Camps, Thierry; Paranthoen, Cyril; Pes, Salvatore; Bouchoule, Sophie; Dupont, Laurent; Doucet, Jean-Baptiste; Alouini, Mehdi; Bardinal, Veronique
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Class-A operation of an optically-pumped 1.6 μm-emitting quantum dash-based vertical-external-cavity surface-emitting laser on InP
err2017-05-10
err6
errOAAI
errPes, Salvatore; Paranthoen, Cyril; Levallois, Christophe; Chevalier, Nicolas; Hamel, Cyril; Audo, Kevin; Loas, Goulc'Hen; Bouhier, Steve; Gomez, Carmen; Harmand, Jean-Christophe; Bouchoule, Sophie; Folliot, Herve; Alouini, Mehdi
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23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers
err2013-11-15
err8
errOAAI
errKlaime, K.; Calo, C.; Piron, R.; Paranthoen, C.; Thiam, D.; Batte, T.; Dehaese, O.; Le Pouliquen, J.; Loualiche, S.; Le Corre, A.; Merghem, K.; Martinez, A.; Ramdane, A.
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Enhancement of the polarization stability of a 1.55 μm emitting vertical-cavity surface-emitting laser under modulation using quantum dashes
err2012-07-11
err7
errOAAI
errGauthier, J. -P.; Paranthoen, C.; Levallois, C.; Shuaib, A.; Lamy, J. -M.; Folliot, H.; Perrin, M.; Dehaese, O.; Chevalier, N.; Durand, O.; Le Corre, A.
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Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate
err2012-06-01
err2
errOAAI
errSalman, S.; Folliot, H.; Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoen, C.; Bertru, N.; Labbe, C.; Letoublon, A.; Le Corre, A.
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Tunable semiconductor vertical-cavity surface-emitting laser with an intracavity liquid crystal layer
err2011-04-18
err28
PREAI
errCastany, O.; Dupont, L.; Shuaib, A.; Gauthier, J. P.; Levallois, C.; Paranthoen, C.
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Polarization control of 1.6 μm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP(001)
err2009-07-10
err14
PREAI
errLamy, J. M.; Paranthoen, C.; Levallois, C.; Nakkar, A.; Folliot, H.; Gauthier, J. P.; Dehaese, O.; Le Corre, A.; Loualiche, S.
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Design of an InGaAs/InP 1.55 μm electrically pumped VCSEL
err2009-06-03
err1
PREAI
errLamy, J. -M.; Boyer-Richard, S.; Levallois, C.; Paranthoen, C.; Folliot, H.; Chevalier, N.; Le Corre, A.; Loualiche, S.
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Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substrates
err2007-12-27
err16
PREAI
errAlghoraibi, I.; Rohel, T.; Piron, R.; Bertru, N.; Paranthoen, C.; Elias, G.; Nakkar, A.; Folliot, H.; Le Corre, A.; Loualiche, S.
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Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots
err2006-12-18
err20
errOAAI
errCornet, C.; Hayne, M.; Caroff, P.; Levallois, C.; Joulaud, L.; Homeyer, E.; Paranthoen, C.; Even, J.; Labbe, C.; Folliot, H.; Moshchalkov, V. V.; Loualiche, S.
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Electronic and optical properties of InAs/InP quantum dots on InP(100) and InP(311)B substrates:: Theory and experiment
err2006-07-12
err69
errOAAI
errCornet, C.; Schliwa, A.; Even, J.; Dore, F.; Celebi, C.; Letoublon, A.; Mace, E.; Paranthoen, C.; Simon, A.; Koenraad, P. M.; Bertru, N.; Bimberg, D.; Loualiche, S.
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High-gain and low-threshold InAs quantum-dot lasers on InP -: art. no. 243107
err2005-12-06
err122
PREAI
errCaroff, P; Paranthoen, C; Platz, C; Dehaese, O; Folliot, H; Bertru, N; Labbé, C; Piron, R; Homeyer, E; Le Corre, A; Loualiche, S
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Vertical electronic coupling between InAs/InP quantum-dot layers emitting in the near-infrared range -: art. no. 111905
err2005-03-07
err36
PREAI
errMiska, P; Even, J; Paranthoen, C; Dehaese, O; Jbeli, A; Senès, M; Marie, X
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